{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,19]],"date-time":"2026-09-19T13:29:19Z","timestamp":1789824559966,"version":"4.0.1"},"reference-count":12,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,9]]},"DOI":"10.1109\/cicc.2015.7338398","type":"proceedings-article","created":{"date-parts":[[2015,11,30]],"date-time":"2015-11-30T21:52:45Z","timestamp":1448920365000},"page":"1-6","source":"Crossref","is-referenced-by-count":1,"title":["Materials challenges for III-V\/Si co-integrated CMOS"],"prefix":"10.1109","author":[{"given":"D. K.","family":"Sadana","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"C.-W.","family":"Cheng","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"B.","family":"Wacaser","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"W.","family":"Spratt","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"K.T.","family":"Shiu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"S.W.","family":"Bedell","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref4","article-title":"Ultrahigh-Speed 0.5 V Supply Voltage InGaAs Quantum-Well Transistors on Silicon Substrate","volume":"28","author":"dutta","year":"2007","journal-title":"EDL"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2003.822686"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1038\/nature11293"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1063\/1.1819976"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1063\/1.3638474"},{"key":"ref5","doi-asserted-by":"crossref","DOI":"10.1063\/1.125187","volume":"75","author":"luan","year":"1999","journal-title":"Appl Phys Lett"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1038\/nature10677"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1149\/1.3487628"},{"key":"ref7","doi-asserted-by":"crossref","DOI":"10.1143\/JJAP.28.L1721","volume":"28","author":"hayafuji","year":"1989","journal-title":"Jpn J Appl Phys"},{"key":"ref2","first-page":"25.3.1","article-title":"CMOS compatible self-aligned In0.53Ga0.47As MOSFETs with GMSAT over 2200 mS\/mm at VDD = 0.5 V","author":"sun","year":"2014","journal-title":"IEDM"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2014.6894349"},{"key":"ref1","first-page":"3.3.1","article-title":"22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL","author":"narasimha","year":"2014","journal-title":"IEDM"}],"event":{"name":"2015 IEEE Custom Integrated Circuits Conference - CICC 2015","location":"San Jose, CA, USA","start":{"date-parts":[[2015,9,28]]},"end":{"date-parts":[[2015,9,30]]}},"container-title":["2015 IEEE Custom Integrated Circuits Conference (CICC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7321938\/7338356\/07338398.pdf?arnumber=7338398","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,24]],"date-time":"2017-06-24T00:43:42Z","timestamp":1498265022000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7338398\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,9]]},"references-count":12,"URL":"https:\/\/doi.org\/10.1109\/cicc.2015.7338398","relation":{},"subject":[],"published":{"date-parts":[[2015,9]]}}}