{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,24]],"date-time":"2025-10-24T16:41:50Z","timestamp":1761324110765},"reference-count":10,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2017,4]]},"DOI":"10.1109\/cicc.2017.7993687","type":"proceedings-article","created":{"date-parts":[[2017,8,9]],"date-time":"2017-08-09T16:07:33Z","timestamp":1502294853000},"page":"1-4","source":"Crossref","is-referenced-by-count":5,"title":["12\u00d7 bit-error acceptable, 300\u00d7 extended data-retention time, value-aware SSD with vertical 3D-TLC NAND flash memories for image recognition"],"prefix":"10.1109","author":[{"given":"Yoshiaki","family":"Deguchi","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Toshiki","family":"Nakamura","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Atsuro","family":"Kobayashi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ken","family":"Takeuchi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2016.7417947"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2009.5424261"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2015.7062965"},{"journal-title":"OpenFace","year":"0","key":"ref6"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2016.7417941"},{"key":"ref8","first-page":"130","article-title":"A 128Gb 3b\/cell V-NAND Flash Memory with 1Gb\/s I\/O Rate","author":"im","year":"2015","journal-title":"ISSCC Dig Tech Papers"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2012.6177080"},{"key":"ref2","first-page":"244","article-title":"A 32kb SRAM for Error-Free and Error-Tolerant Applications with Dynamic Energy-Quality Management in 28nm CMOS","author":"frustaci","year":"2014","journal-title":"ISSCC Dig Tech Papers"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2011.5746283"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/ETS.2013.6569370"}],"event":{"name":"2017 IEEE Custom Integrated Circuits Conference (CICC)","start":{"date-parts":[[2017,4,30]]},"location":"Austin, TX","end":{"date-parts":[[2017,5,3]]}},"container-title":["2017 IEEE Custom Integrated Circuits Conference (CICC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7986634\/7993450\/07993687.pdf?arnumber=7993687","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,9,6]],"date-time":"2017-09-06T21:11:26Z","timestamp":1504732286000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7993687\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,4]]},"references-count":10,"URL":"https:\/\/doi.org\/10.1109\/cicc.2017.7993687","relation":{},"subject":[],"published":{"date-parts":[[2017,4]]}}}