{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,25]],"date-time":"2026-04-25T14:37:10Z","timestamp":1777127830622,"version":"3.51.4"},"reference-count":5,"publisher":"IEEE","license":[{"start":{"date-parts":[[2023,4,1]],"date-time":"2023-04-01T00:00:00Z","timestamp":1680307200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2023,4,1]],"date-time":"2023-04-01T00:00:00Z","timestamp":1680307200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2023,4]]},"DOI":"10.1109\/cicc57935.2023.10121182","type":"proceedings-article","created":{"date-parts":[[2023,5,11]],"date-time":"2023-05-11T17:23:55Z","timestamp":1683825835000},"page":"1-2","source":"Crossref","is-referenced-by-count":3,"title":["A Monolithic GaN Driver and GaN Power Switch with Power-rail Charging Saturation Bootstrap technique achieving gate rising and falling time ratio of 1.28"],"prefix":"10.1109","author":[{"given":"Yao","family":"Qin","sequence":"first","affiliation":[{"name":"University of Electronic Science and Technology of China,Chengdu,China"}]},{"given":"Xin","family":"Ming","sequence":"additional","affiliation":[{"name":"University of Electronic Science and Technology of China,Chengdu,China"}]},{"given":"Zhi-Yi","family":"Lin","sequence":"additional","affiliation":[{"name":"University of Electronic Science and Technology of China,Chengdu,China"}]},{"given":"Zhi-Jiu","family":"Wu","sequence":"additional","affiliation":[{"name":"University of Electronic Science and Technology of China,Chengdu,China"}]},{"given":"Chun-Wang","family":"Zhuang","sequence":"additional","affiliation":[{"name":"University of Electronic Science and Technology of China,Chengdu,China"}]},{"given":"Jian-Jun","family":"Kuang","sequence":"additional","affiliation":[{"name":"University of Electronic Science and Technology of China,Chengdu,China"}]},{"given":"Peng","family":"Luo","sequence":"additional","affiliation":[{"name":"Chengdu Danxi Technology Co., Ltd,,Chengdu,China"}]},{"given":"Bo","family":"Zhang","sequence":"additional","affiliation":[{"name":"University of Electronic Science and Technology of China,Chengdu,China"}]}],"member":"263","reference":[{"key":"ref4","first-page":"1","article-title":"A Monolithic GaN Direct 48V\/1V AHB Switching Power IC with Auto-Lock Auto-Break Level Shifting, SelfBootstrapped Hybrid Gate Driving, and On-Die Temperature Sensing","author":"yan","year":"2022","journal-title":"ISSCC"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2021.3103875"},{"key":"ref5","first-page":"67846793","article-title":"Monolithic Integration of Gate Driver and Protection Modules With P-GaN Gate Power HEMTs","author":"han","year":"2022","journal-title":"TIE"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC19947.2020.9063102"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/CICC48029.2020.9075937"}],"event":{"name":"2023 IEEE Custom Integrated Circuits Conference (CICC)","location":"San Antonio, TX, USA","start":{"date-parts":[[2023,4,23]]},"end":{"date-parts":[[2023,4,26]]}},"container-title":["2023 IEEE Custom Integrated Circuits Conference (CICC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10121189\/10121178\/10121182.pdf?arnumber=10121182","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,6,12]],"date-time":"2023-06-12T17:51:48Z","timestamp":1686592308000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10121182\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,4]]},"references-count":5,"URL":"https:\/\/doi.org\/10.1109\/cicc57935.2023.10121182","relation":{},"subject":[],"published":{"date-parts":[[2023,4]]}}}