{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,5,21]],"date-time":"2025-05-21T06:56:34Z","timestamp":1747810594330},"reference-count":22,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2009,4]]},"DOI":"10.1109\/date.2009.5090694","type":"proceedings-article","created":{"date-parts":[[2013,2,19]],"date-time":"2013-02-19T18:16:39Z","timestamp":1361297799000},"page":"387-392","source":"Crossref","is-referenced-by-count":25,"title":["Impact of voltage scaling on nanoscale SRAM reliability"],"prefix":"10.1109","author":[{"given":"V.","family":"Chandra","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"R.","family":"Aitken","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"19","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2007.910444"},{"key":"22","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2005.04.004"},{"key":"17","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.1996.507828"},{"key":"18","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2005.855684"},{"key":"15","article-title":"physical and predictive models of ultra thin oxide reliability in cmos devices and circuits","author":"stathis","year":"2001","journal-title":"IRPS"},{"key":"16","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2003.812139"},{"key":"13","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2002.808155"},{"key":"14","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.1994.307864"},{"key":"11","doi-asserted-by":"publisher","DOI":"10.1109\/SISPAD.2003.1233692"},{"key":"12","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2002.802600"},{"key":"21","doi-asserted-by":"publisher","DOI":"10.1016\/S0038-1101(02)00151-X"},{"key":"3","doi-asserted-by":"publisher","DOI":"10.1109\/DFT.2008.50"},{"key":"20","article-title":"canary replica feedback for near-drv standby vdd scaling in a 90 nm sram","author":"wang","year":"2007","journal-title":"CICC"},{"key":"2","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2007.912983"},{"key":"1","doi-asserted-by":"publisher","DOI":"10.1109\/7298.946456"},{"key":"10","article-title":"sram leakage suppression by minimizing standby supply voltage","author":"qin","year":"2004","journal-title":"Proc Int Symp Quality Electronic Design (ISQED)"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.1109\/16.987123"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1109\/IOLTS.2006.35"},{"key":"5","article-title":"relation between breakdown mode and breakdown location in short channel nmosfets and its impact on reliability specifications","author":"degraeve","year":"2001","journal-title":"IRPS"},{"key":"4","article-title":"alpha-ser modeling and simulation for sub-0.25m cmos technology","author":"dai","year":"1999","journal-title":"IEEE Symposium on VLSI Technology"},{"key":"9","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2006.884353"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDERC.2003.1256814"}],"event":{"name":"2009 Design, Automation & Test in Europe Conference & Exhibition (DATE'09)","start":{"date-parts":[[2009,4,20]]},"location":"Nice","end":{"date-parts":[[2009,4,24]]}},"container-title":["2009 Design, Automation & Test in Europe Conference & Exhibition"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/4926138\/5090609\/05090694.pdf?arnumber=5090694","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,17]],"date-time":"2017-03-17T17:50:26Z","timestamp":1489773026000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/5090694\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2009,4]]},"references-count":22,"URL":"https:\/\/doi.org\/10.1109\/date.2009.5090694","relation":{},"subject":[],"published":{"date-parts":[[2009,4]]}}}