{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,18]],"date-time":"2026-01-18T11:13:59Z","timestamp":1768734839835,"version":"3.49.0"},"reference-count":26,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2011,3]]},"DOI":"10.1109\/date.2011.5763239","type":"proceedings-article","created":{"date-parts":[[2013,2,19]],"date-time":"2013-02-19T17:45:16Z","timestamp":1361295916000},"page":"1-6","source":"Crossref","is-referenced-by-count":30,"title":["Analog circuit reliability in sub-32 nanometer CMOS: Analysis and mitigation"],"prefix":"10.1109","author":[{"given":"G","family":"Gielen","sequence":"first","affiliation":[]},{"given":"E","family":"Maricau","sequence":"additional","affiliation":[]},{"given":"P","family":"De Wit","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/16.981213"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDERC.2010.5617735"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/43.256927"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IPFA.2008.4588195"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/DATE.2008.4484862"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2005.04.004"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/DATE.2011.5763206"},{"key":"ref17","article-title":"Hot-electron-induced MOSFET degradation-model, moni-tor, and improvement","author":"ko","year":"0","journal-title":"TED"},{"key":"ref18","article-title":"Lucky-electron model of channel hot-electron injection in MOSFET'S","author":"tam","year":"1984","journal-title":"TED"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2004.1419081"},{"key":"ref4","doi-asserted-by":"crossref","DOI":"10.1109\/JPROC.2009.2024663","article-title":"Analog Circuit Design in Nanoscale CMOS Technolo-gies","author":"lewyn","year":"2009","journal-title":"Proceedings of the IEEE"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/SCED.2009.4800475"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2010.5488667"},{"key":"ref5","article-title":"NBTI Model for Analog IC Reliability Simulation","author":"maricau","year":"0","journal-title":"EL"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2010.5488814"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2044014"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2008.06.016"},{"key":"ref9","first-page":"373","article-title":"Mechanism of high-k dielectric-induced breakdown of the interfacial Si02 layer","author":"bersuker","year":"2010","journal-title":"IRPS"},{"key":"ref1","year":"2009","journal-title":"International Technology Roadmap for Semiconductors (ITRS)"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1063\/1.1567461"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2008.4558858"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2005.08.001"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2010.2062870"},{"key":"ref23","author":"montgomery","year":"2009","journal-title":"Design and Analysis of Experiments"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1989.572629"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2007.906200"}],"event":{"name":"2011 Design, Automation & Test in Europe","location":"Grenoble","start":{"date-parts":[[2011,3,14]]},"end":{"date-parts":[[2011,3,18]]}},"container-title":["2011 Design, Automation & Test in Europe"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/5754459\/5762992\/05763239.pdf?arnumber=5763239","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,21]],"date-time":"2017-06-21T03:50:03Z","timestamp":1498017003000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/5763239\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2011,3]]},"references-count":26,"URL":"https:\/\/doi.org\/10.1109\/date.2011.5763239","relation":{},"subject":[],"published":{"date-parts":[[2011,3]]}}}