{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,6]],"date-time":"2024-09-06T14:59:57Z","timestamp":1725634797901},"reference-count":11,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,11]]},"DOI":"10.1109\/dcis.2018.8681478","type":"proceedings-article","created":{"date-parts":[[2019,4,27]],"date-time":"2019-04-27T07:14:45Z","timestamp":1556349285000},"page":"1-5","source":"Crossref","is-referenced-by-count":1,"title":["Quantum dot location relevance into SET-FET circuits based on FinFET devices"],"prefix":"10.1109","author":[{"given":"E.","family":"Amat","sequence":"first","affiliation":[{"name":"NEMS and Nanofabrication group, Institute of Microelectronics of Barcelona (IMB-CNM, CSIC), Bellaterra, Spain"}]},{"given":"A.","family":"del Moral","sequence":"additional","affiliation":[{"name":"NEMS and Nanofabrication group, Institute of Microelectronics of Barcelona (IMB-CNM, CSIC), Bellaterra, Spain"}]},{"given":"J.","family":"Bausells","sequence":"additional","affiliation":[{"name":"NEMS and Nanofabrication group, Institute of Microelectronics of Barcelona (IMB-CNM, CSIC), Bellaterra, Spain"}]},{"given":"F.","family":"Perez-Murano","sequence":"additional","affiliation":[{"name":"NEMS and Nanofabrication group, Institute of Microelectronics of Barcelona (IMB-CNM, CSIC), Bellaterra, Spain"}]},{"given":"F.","family":"Klupfel","sequence":"additional","affiliation":[{"name":"Integrated Systems and Device Technology group, Fraunhofer Institute (IISB), Erlangen, Germany"}]}],"member":"263","reference":[{"article-title":"Ions4SET project webpage","year":"2016","author":"belli","key":"ref4"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/CPEM.2002.1034749"},{"year":"2012","key":"ref10","article-title":"HSPICE 2012.06, User Guide"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2013.6532017"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TC.2014.2375204"},{"key":"ref5","first-page":"23.5.1","article-title":"Comprehensive analysis of Ion variation in metal gate FinFETs for 20nm and beyond","author":"matsukawa","year":"2011","journal-title":"IEEE Int Electron Devices Meet"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.23919\/SISPAD.2017.8085268"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2002.808554"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1569994"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2007.4339727"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2003.1269377"}],"event":{"name":"2018 Conference on Design of Circuits and Integrated Systems (DCIS)","start":{"date-parts":[[2018,11,14]]},"location":"Lyon, France","end":{"date-parts":[[2018,11,16]]}},"container-title":["2018 Conference on Design of Circuits and Integrated Systems (DCIS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8679952\/8681454\/08681478.pdf?arnumber=8681478","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,6,8]],"date-time":"2021-06-08T02:30:02Z","timestamp":1623119402000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8681478\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,11]]},"references-count":11,"URL":"https:\/\/doi.org\/10.1109\/dcis.2018.8681478","relation":{},"subject":[],"published":{"date-parts":[[2018,11]]}}}