{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,8,1]],"date-time":"2025-08-01T18:40:06Z","timestamp":1754073606281,"version":"3.41.2"},"reference-count":4,"publisher":"IEEE","license":[{"start":{"date-parts":[[2018,6,1]],"date-time":"2018-06-01T00:00:00Z","timestamp":1527811200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2018,6,1]],"date-time":"2018-06-01T00:00:00Z","timestamp":1527811200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,6]]},"DOI":"10.1109\/drc.2018.8442191","type":"proceedings-article","created":{"date-parts":[[2018,9,7]],"date-time":"2018-09-07T14:52:02Z","timestamp":1536331922000},"page":"1-2","source":"Crossref","is-referenced-by-count":13,"title":["Insinhts on the DC Characterization of Ferroelectric Field-Effect-Transistors"],"prefix":"10.1109","author":[{"given":"Matthew","family":"Jerry","sequence":"first","affiliation":[{"name":"University of Notre Dame, Notre Dame, IN, 46556, USA"}]},{"given":"Jeffrey A.","family":"Smith","sequence":"additional","affiliation":[{"name":"University of Notre Dame, Notre Dame, IN, 46556, USA"}]},{"given":"Kai","family":"Ni","sequence":"additional","affiliation":[{"name":"University of Notre Dame, Notre Dame, IN, 46556, USA"}]},{"given":"Atanu","family":"Saha","sequence":"additional","affiliation":[{"name":"Purdue University, West Lafayette, IN, 47906, USA"}]},{"given":"Sumeet","family":"Gupta","sequence":"additional","affiliation":[{"name":"Purdue University, West Lafayette, IN, 47906, USA"}]},{"given":"Suman","family":"Datta","sequence":"additional","affiliation":[{"name":"University of Notre Dame, Notre Dame, IN, 46556, USA"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"crossref","first-page":"1790","DOI":"10.1109\/TED.2002.803626","article-title":"Device modeling of ferroelectric memory field-effect transistor (FeMFET)","volume":"49","author":"lue","year":"2002","journal-title":"IEEE Trans Electron Devices"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.23919\/VLSIT.2017.7998160"},{"key":"ref2","doi-asserted-by":"crossref","first-page":"6. 2. 1","DOI":"10.1109\/IEDM.2017.8268338","article-title":"Ferroelectric FET analog synapse for acceleration of deep neural network training","author":"jerry","year":"2017","journal-title":"2017 IEEE International Electron Device Meeting (IEDM)"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2787063"}],"event":{"name":"2018 76th Device Research Conference (DRC)","start":{"date-parts":[[2018,6,24]]},"location":"Santa Barbara, CA, USA","end":{"date-parts":[[2018,6,27]]}},"container-title":["2018 76th Device Research Conference (DRC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8424808\/8442143\/08442191.pdf?arnumber=8442191","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,8,1]],"date-time":"2025-08-01T18:09:17Z","timestamp":1754071757000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8442191\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,6]]},"references-count":4,"URL":"https:\/\/doi.org\/10.1109\/drc.2018.8442191","relation":{},"subject":[],"published":{"date-parts":[[2018,6]]}}}