{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,1]],"date-time":"2026-08-01T02:10:53Z","timestamp":1785550253135,"version":"3.56.0"},"reference-count":10,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,6,26]],"date-time":"2022-06-26T00:00:00Z","timestamp":1656201600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,6,26]],"date-time":"2022-06-26T00:00:00Z","timestamp":1656201600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,6,26]]},"DOI":"10.1109\/drc55272.2022.9855789","type":"proceedings-article","created":{"date-parts":[[2022,8,19]],"date-time":"2022-08-19T15:39:21Z","timestamp":1660923561000},"page":"1-2","source":"Crossref","is-referenced-by-count":6,"title":["Bias Stress Stability of ITO Transistors and its Dependence on Dielectric Properties"],"prefix":"10.1109","author":[{"given":"Lauren","family":"Hoang","sequence":"first","affiliation":[{"name":"Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Alwin","family":"Daus","sequence":"additional","affiliation":[{"name":"Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sumaiya","family":"Wahid","sequence":"additional","affiliation":[{"name":"Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jimin","family":"Kwon","sequence":"additional","affiliation":[{"name":"Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jung-Soo","family":"Ko","sequence":"additional","affiliation":[{"name":"Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shengjun","family":"Qin","sequence":"additional","affiliation":[{"name":"Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Mahnaz","family":"Islam","sequence":"additional","affiliation":[{"name":"Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Krishna C.","family":"Saraswat","sequence":"additional","affiliation":[{"name":"Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"H.-S Philip","family":"Wong","sequence":"additional","affiliation":[{"name":"Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Eric","family":"Pop","sequence":"additional","affiliation":[{"name":"Stanford Univ.,Dept. of Electrical Eng.,Stanford,CA,USA,94305"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"crossref","DOI":"10.1038\/s41928-021-00671-0","volume":"4","author":"shiah","year":"2021","journal-title":"Nat Electron"},{"key":"ref3","volume":"68","author":"si","year":"2021","journal-title":"IEEE-TED"},{"key":"ref10","author":"illarionov","year":"2018","journal-title":"IRPS"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2021.3113893"},{"key":"ref5","volume":"31","author":"chasin","year":"2021","journal-title":"IEDM"},{"key":"ref8","volume":"43","author":"chen","year":"2022","journal-title":"IEEE-EDL"},{"key":"ref7","volume":"11","author":"park","year":"2017","journal-title":"ACS Nano"},{"key":"ref2","volume":"18","author":"li","year":"2019","journal-title":"Nat Mat"},{"key":"ref9","doi-asserted-by":"crossref","DOI":"10.1021\/acs.nanolett.0c03967","volume":"21","author":"si","year":"2021","journal-title":"Nano Lett"},{"key":"ref1","author":"belmonte","year":"2020","journal-title":"IEDM"}],"event":{"name":"2022 Device Research Conference (DRC)","location":"Columbus, OH, USA","start":{"date-parts":[[2022,6,26]]},"end":{"date-parts":[[2022,6,29]]}},"container-title":["2022 Device Research Conference (DRC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9855770\/9855647\/09855789.pdf?arnumber=9855789","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,9,5]],"date-time":"2022-09-05T16:30:51Z","timestamp":1662395451000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9855789\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,6,26]]},"references-count":10,"URL":"https:\/\/doi.org\/10.1109\/drc55272.2022.9855789","relation":{},"subject":[],"published":{"date-parts":[[2022,6,26]]}}}