{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,30]],"date-time":"2025-09-30T04:25:50Z","timestamp":1759206350620,"version":"3.37.3"},"reference-count":4,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,6,26]],"date-time":"2022-06-26T00:00:00Z","timestamp":1656201600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,6,26]],"date-time":"2022-06-26T00:00:00Z","timestamp":1656201600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/501100001695","name":"JST [moonshot R&D]","doi-asserted-by":"publisher","award":["JPMJMS2067"],"award-info":[{"award-number":["JPMJMS2067"]}],"id":[{"id":"10.13039\/501100001695","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003382","name":"CREST","doi-asserted-by":"publisher","award":["JPMJCR 19I2"],"award-info":[{"award-number":["JPMJCR 19I2"]}],"id":[{"id":"10.13039\/501100003382","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,6,26]]},"DOI":"10.1109\/drc55272.2022.9855815","type":"proceedings-article","created":{"date-parts":[[2022,8,19]],"date-time":"2022-08-19T19:39:21Z","timestamp":1660937961000},"page":"1-2","source":"Crossref","is-referenced-by-count":3,"title":["Enhanced Drain Current in Transient Mode due to Long Ionization Time of Shallow Impurities at 4 K in 65-nm bulk Cryo CMOS Transistors"],"prefix":"10.1109","author":[{"given":"Tomohisa","family":"Miyao","sequence":"first","affiliation":[{"name":"The University of Tokyo,Department of Materials Engineering,Tokyo,Japan,113-8656"}]},{"given":"Takahisa","family":"Tanaka","sequence":"additional","affiliation":[{"name":"The University of Tokyo,Department of Materials Engineering,Tokyo,Japan,113-8656"}]},{"given":"Itsuki","family":"Imanishi","sequence":"additional","affiliation":[{"name":"The University of Tokyo,Department of Materials Engineering,Tokyo,Japan,113-8656"}]},{"given":"Masayuki","family":"Ichikawa","sequence":"additional","affiliation":[{"name":"Keio University,Department of Electronics and Electrical Engineering,Yokohama,Kanagawa,Japan,223-8522"}]},{"given":"Shuya","family":"Nakagawa","sequence":"additional","affiliation":[{"name":"Keio University,Department of Electronics and Electrical Engineering,Yokohama,Kanagawa,Japan,223-8522"}]},{"given":"Hiroki","family":"Ishikuro","sequence":"additional","affiliation":[{"name":"Keio University,Department of Electronics and Electrical Engineering,Yokohama,Kanagawa,Japan,223-8522"}]},{"given":"Toshitsugu","family":"Sakamoto","sequence":"additional","affiliation":[{"name":"Nanobridge Semiconductor, Inc.,Tsukuba,Ibaraki,Japan,305-8564"}]},{"given":"Munehiro","family":"Tada","sequence":"additional","affiliation":[{"name":"Nanobridge Semiconductor, Inc.,Tsukuba,Ibaraki,Japan,305-8564"}]},{"given":"Ken","family":"Uchida","sequence":"additional","affiliation":[{"name":"The University of Tokyo,Department of Materials Engineering,Tokyo,Japan,113-8656"}]}],"member":"263","reference":[{"key":"ref4","first-page":"809","author":"takahashi","year":"2011","journal-title":"IEDM Tech Dig"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1063\/1.352990"},{"key":"ref2","first-page":"780","volume":"8","author":"beckers","year":"2020","journal-title":"IEEE JED"},{"key":"ref1","first-page":"1007","volume":"6","author":"beckers","year":"2018","journal-title":"IEEE JED"}],"event":{"name":"2022 Device Research Conference (DRC)","start":{"date-parts":[[2022,6,26]]},"location":"Columbus, OH, USA","end":{"date-parts":[[2022,6,29]]}},"container-title":["2022 Device Research Conference (DRC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9855770\/9855647\/09855815.pdf?arnumber=9855815","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,9,5]],"date-time":"2022-09-05T20:30:30Z","timestamp":1662409830000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9855815\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,6,26]]},"references-count":4,"URL":"https:\/\/doi.org\/10.1109\/drc55272.2022.9855815","relation":{},"subject":[],"published":{"date-parts":[[2022,6,26]]}}}