{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,8,12]],"date-time":"2025-08-12T21:36:15Z","timestamp":1755034575272},"reference-count":3,"publisher":"IEEE","license":[{"start":{"date-parts":[[2024,6,24]],"date-time":"2024-06-24T00:00:00Z","timestamp":1719187200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,6,24]],"date-time":"2024-06-24T00:00:00Z","timestamp":1719187200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/100006132","name":"Office of Science","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100006132","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100017535","name":"Energy Frontier Research Centers","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100017535","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2024,6,24]]},"DOI":"10.1109\/drc61706.2024.10605410","type":"proceedings-article","created":{"date-parts":[[2024,7,29]],"date-time":"2024-07-29T19:15:01Z","timestamp":1722280501000},"page":"1-2","source":"Crossref","is-referenced-by-count":2,"title":["Boron-Doped Aluminum Nitride Ferroelectric Field-Effect Transistors with ZnO Semiconductor Channel"],"prefix":"10.1109","author":[{"given":"Quyen","family":"Tran","sequence":"first","affiliation":[{"name":"Electrical Engineering"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"John","family":"Hayden","sequence":"additional","affiliation":[{"name":"Material Science and Engineering"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Joseph","family":"Casamento","sequence":"additional","affiliation":[{"name":"Massachusetts Institute of Technology,Cambridge,U.S.A,02139"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jon-Paul","family":"Maria","sequence":"additional","affiliation":[{"name":"Material Science and Engineering"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Thomas N.","family":"Jackson","sequence":"additional","affiliation":[{"name":"Electrical Engineering"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1038\/s41565-023-01399-y"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/drc58590.2023.10186982"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.2c03169"}],"event":{"name":"2024 Device Research Conference (DRC)","start":{"date-parts":[[2024,6,24]]},"location":"College Park, MD, USA","end":{"date-parts":[[2024,6,26]]}},"container-title":["2024 Device Research Conference (DRC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/10605129\/10605242\/10605410.pdf?arnumber=10605410","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,7,30]],"date-time":"2024-07-30T05:10:10Z","timestamp":1722316210000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10605410\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,6,24]]},"references-count":3,"URL":"https:\/\/doi.org\/10.1109\/drc61706.2024.10605410","relation":{},"subject":[],"published":{"date-parts":[[2024,6,24]]}}}