{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,12,15]],"date-time":"2024-12-15T05:05:24Z","timestamp":1734239124665,"version":"3.30.2"},"reference-count":11,"publisher":"IEEE","license":[{"start":{"date-parts":[[2024,10,14]],"date-time":"2024-10-14T00:00:00Z","timestamp":1728864000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,10,14]],"date-time":"2024-10-14T00:00:00Z","timestamp":1728864000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2024,10,14]]},"DOI":"10.1109\/dttis62212.2024.10780220","type":"proceedings-article","created":{"date-parts":[[2024,12,13]],"date-time":"2024-12-13T18:49:01Z","timestamp":1734115741000},"page":"1-4","source":"Crossref","is-referenced-by-count":0,"title":["MOSFET electron mobility enhancement using source\/drain recess"],"prefix":"10.1109","author":[{"given":"L.","family":"Antunes","sequence":"first","affiliation":[{"name":"STMicroelectronics,Rousset,France,13790"}]},{"given":"P.","family":"Devoge","sequence":"additional","affiliation":[{"name":"STMicroelectronics,Crolles,France,38920"}]},{"given":"P.","family":"Masson","sequence":"additional","affiliation":[{"name":"University of Côte d'Azur, Polytech’Lab UPR UCA,Sophia-Antipolis,France,7498"}]},{"given":"J.","family":"Amouroux","sequence":"additional","affiliation":[{"name":"STMicroelectronics,Rousset,France,13790"}]},{"given":"J.","family":"Dura","sequence":"additional","affiliation":[{"name":"STMicroelectronics,Rousset,France,13790"}]},{"given":"C.","family":"Rivero","sequence":"additional","affiliation":[{"name":"STMicroelectronics,Rousset,France,13790"}]},{"given":"F.","family":"Julien","sequence":"additional","affiliation":[{"name":"STMicroelectronics,Rousset,France,13790"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/sirf.2015.7119865"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/icsict.2001.981536"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/dttis59576.2023.10348288"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/iedm.2003.1269169"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/iedm.2004.1419113"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2007.895425"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1116\/1.1505959"},{"issue":"10","key":"ref8","doi-asserted-by":"crossref","first-page":"1515","DOI":"10.1016\/0038-1101(96)00059-7","article-title":"MOSFET CARRIER MOBILITY MODEL BASED ON GATE OXIDE","volume":"39","author":"Kai","year":"1996","journal-title":"Solid-State Electron."},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1088\/0268-1242\/12\/4\/002"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1049\/el:19880369"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1987.23207"}],"event":{"name":"2024 IEEE International Conference on Design, Test and Technology of Integrated Systems (DTTIS)","start":{"date-parts":[[2024,10,14]]},"location":"Aix-EN-PROVENCE, France","end":{"date-parts":[[2024,10,16]]}},"container-title":["2024 IEEE International Conference on Design, Test and Technology of Integrated Systems (DTTIS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/10779589\/10779988\/10780220.pdf?arnumber=10780220","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,12,14]],"date-time":"2024-12-14T06:47:36Z","timestamp":1734158856000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10780220\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,10,14]]},"references-count":11,"URL":"https:\/\/doi.org\/10.1109\/dttis62212.2024.10780220","relation":{},"subject":[],"published":{"date-parts":[[2024,10,14]]}}}