{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,4]],"date-time":"2024-09-04T02:34:53Z","timestamp":1725417293202},"reference-count":9,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2016,6]]},"DOI":"10.1109\/ecai.2016.7861122","type":"proceedings-article","created":{"date-parts":[[2017,2,23]],"date-time":"2017-02-23T19:39:14Z","timestamp":1487878754000},"page":"1-6","source":"Crossref","is-referenced-by-count":2,"title":["Platform for monitoring the temperature of power LED junction by using the embedded protection diode"],"prefix":"10.1109","author":[{"given":"Dan Tudor","family":"Vuza","sequence":"first","affiliation":[]},{"given":"Marian","family":"Vladescu","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4614-5091-7_4"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1063\/1.1795351"},{"key":"ref6","first-page":"180","article-title":"Improved Electrical Measurement Method for Junction Temperature of Light Emitting Diodes","author":"han","year":"2012","journal-title":"PRZEGLAD ELEKTROTECHNICZNY (Electrical Review) NR 3\/2012"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/SIITME.2014.6967009"},{"year":"2014","key":"ref8","article-title":"High Power Infrared Emitter (850nm) - SFH4232"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1117\/12.593696"},{"key":"ref2","doi-asserted-by":"crossref","DOI":"10.1117\/12.593696","article-title":"Junction temperature in light-emitting diodes assessed by different methods","author":"chhajeda","year":"2005","journal-title":"Proc SPIE 5739 Light-Emitting Diodes Research Manufacturing and Applications IX"},{"article-title":"Accurate Temperature Sensing with an External P-N Junction, Linear Technology","year":"2012","author":"jones","key":"ref9"},{"key":"ref1","first-page":"925820-1","article-title":"Power LED efficiency in relation to operating temperature","author":"plotog","year":"2015","journal-title":"Advanced Topics in Optoelectronics Microelectronics and Nanotechnologies VII (ATOM-N 2014) Proc SPIE 9258"}],"event":{"name":"2016 8th International Conference on Electronics, Computers and Artificial Intelligence (ECAI)","start":{"date-parts":[[2016,6,30]]},"location":"Ploiesti, Romania","end":{"date-parts":[[2016,7,2]]}},"container-title":["2016 8th International Conference on Electronics, Computers and Artificial Intelligence (ECAI)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7843798\/7861062\/07861122.pdf?arnumber=7861122","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,9,18]],"date-time":"2019-09-18T21:19:01Z","timestamp":1568841541000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7861122\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,6]]},"references-count":9,"URL":"https:\/\/doi.org\/10.1109\/ecai.2016.7861122","relation":{},"subject":[],"published":{"date-parts":[[2016,6]]}}}