{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,29]],"date-time":"2024-10-29T15:36:17Z","timestamp":1730216177695,"version":"3.28.0"},"reference-count":6,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2011,8]]},"DOI":"10.1109\/ecctd.2011.6043636","type":"proceedings-article","created":{"date-parts":[[2011,10,13]],"date-time":"2011-10-13T20:55:12Z","timestamp":1318539312000},"page":"685-688","source":"Crossref","is-referenced-by-count":1,"title":["Modeling and experimental results of short channel annular MOS transistors"],"prefix":"10.1109","author":[{"given":"Paula","family":"Lopez","sequence":"first","affiliation":[{"name":"Department of Electronics and Computer Science, University of Santiago de Compostela, Campus Vida, 15782, Spain"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Beatriz","family":"Blanco-Filgueira","sequence":"additional","affiliation":[{"name":"Department of Electronics and Computer Science, University of Santiago de Compostela, Campus Vida, 15782, Spain"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Johann","family":"Hauer","sequence":"additional","affiliation":[{"name":"Fraunhofer Institut fuer Integrierte Schaltungen, Am Wolfsmantel 33, 91058 Erlangen, Germany"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1016\/S0038-1101(00)00010-1"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1982.20865"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/ECCTD.2009.5275096"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2004.839157"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/23.819140"},{"key":"ref1","doi-asserted-by":"crossref","first-page":"2727","DOI":"10.1109\/TNS.2007.910170","article-title":"A radiation hard bandgap reference circuit in a standard $0.13\\ \\mu {\\rm m}$ CMOS technology","volume":"54","author":"vladimir","year":"2007","journal-title":"IEEE Trans on Nuclear Science"}],"event":{"name":"2011 European Conference on Circuit Theory and Design (ECCTD)","start":{"date-parts":[[2011,8,29]]},"location":"Link\u00f6ping, Sweden","end":{"date-parts":[[2011,8,31]]}},"container-title":["2011 20th European Conference on Circuit Theory and Design (ECCTD)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/6033674\/6043284\/06043636.pdf?arnumber=6043636","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,6,9]],"date-time":"2021-06-09T03:08:54Z","timestamp":1623208134000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/6043636\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2011,8]]},"references-count":6,"URL":"https:\/\/doi.org\/10.1109\/ecctd.2011.6043636","relation":{},"subject":[],"published":{"date-parts":[[2011,8]]}}}