{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,19]],"date-time":"2026-03-19T12:06:35Z","timestamp":1773921995204,"version":"3.50.1"},"reference-count":15,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,5]]},"DOI":"10.1109\/eit.2015.7293416","type":"proceedings-article","created":{"date-parts":[[2015,10,8]],"date-time":"2015-10-08T21:58:16Z","timestamp":1444341496000},"page":"676-680","source":"Crossref","is-referenced-by-count":1,"title":["Electrical and thermal analysis of vertical unidirectional 3C-SiC\/Si MESFETs on silicon substrate"],"prefix":"10.1109","author":[{"given":"Ramana","family":"Thakkallapally","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Vamshi","family":"Veesam","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ibrahim","family":"Abdel-Motaleb","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zheng","family":"Shen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/16.24346"},{"key":"ref11","article-title":"Simulation and optimization of SiC field effect transistors","author":"bertilsson","year":"0"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/NEMS.2010.5592539"},{"key":"ref13","year":"0","journal-title":"Silvaco -Atals"},{"key":"ref14","year":"0"},{"key":"ref15","article-title":"Finite element modeling of a transistor heat sink","author":"eppes","year":"0","journal-title":"Hartford University"},{"key":"ref4","first-page":"14","article-title":"A 100W SiC MESFET amplifier for L-band T\/R module of APAR","author":"wojtasiak","year":"2010","journal-title":"The 18th International Conference on Microwave Radar and Wireless Communications (MIKON)"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1007\/s11432-008-0037-x"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.1993.347217"},{"key":"ref5","article-title":"Principles of Semiconductor Devices","author":"van zeghbroeck","year":"0"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1063\/1.93970"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1149\/1.2129570"},{"key":"ref2","article-title":"A unidirectional 3D-SiC MESFET for high power Aerospace Applications","author":"thakkallapally","year":"2014","journal-title":"IEEE National Aerospace and Electronic Conference Dayton OH"},{"key":"ref1","article-title":"Development of silicon carbide semiconductor devices for high temperature applications","author":"matus","year":"1991","journal-title":"NASA Technical Memorandum"},{"key":"ref9","first-page":"180","article-title":"Amorphous and crystalline silicon carbide and related materials","author":"kong","year":"1989","journal-title":"Proc First International conf"}],"event":{"name":"2015 IEEE International Conference on Electro\/Information Technology (EIT)","location":"Dekalb, IL, USA","start":{"date-parts":[[2015,5,21]]},"end":{"date-parts":[[2015,5,23]]}},"container-title":["2015 IEEE International Conference on Electro\/Information Technology (EIT)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7274378\/7293314\/07293416.pdf?arnumber=7293416","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,24]],"date-time":"2017-03-24T22:29:54Z","timestamp":1490394594000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7293416\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,5]]},"references-count":15,"URL":"https:\/\/doi.org\/10.1109\/eit.2015.7293416","relation":{},"subject":[],"published":{"date-parts":[[2015,5]]}}}