{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,4,29]],"date-time":"2025-04-29T23:22:06Z","timestamp":1745968926805},"reference-count":10,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"DOI":"10.1109\/esscir.2004.1356674","type":"proceedings-article","created":{"date-parts":[[2004,11,22]],"date-time":"2004-11-22T11:10:59Z","timestamp":1101121859000},"page":"287-290","source":"Crossref","is-referenced-by-count":21,"title":["An inductor-based 52-GHz 0.18 \u03bcm SiGe HBT cascode LNA with 22 dB gain"],"prefix":"10.1109","author":[{"given":"M.","family":"Gordon","sequence":"first","affiliation":[]},{"given":"S.P.","family":"Voinigescu","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"journal-title":"GigaBit Wireless” Communications","year":"0","key":"ref4"},{"key":"ref3","first-page":"203","article-title":"A $0.13\\ \\mu{\\rm m}$ BiCMOS Technology Featuring a 200\/280 GHz $({\\rm f_T}\/{\\rm f}_{\\max})$ SiGe HBT","author":"orner","year":"2003","journal-title":"Proc IEEE BCTM"},{"year":"0","author":"niknejad","key":"ref10"},{"key":"ref6","first-page":"442","article-title":"600Hz Transceiver Circuits in SiGe Bipolar Technology","author":"reynolds","year":"2004","journal-title":"IEEE ISSCC Digest and Slides Supplement"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2002.807404"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2004.1335845"},{"key":"ref7","first-page":"318","article-title":"A Fully Integrated 24GHz 8-Path Phased-Array Receiver in Silicon","author":"hashemi","year":"2004","journal-title":"ISSCC Digest and Slides Supplement"},{"key":"ref2","first-page":"199","article-title":"A 150GHz ${\\rm f_T}\/{\\rm f}_{\\max} \\ 0.13\\mu {\\rm m}$ SiGe:C BiCMOS technology","author":"laurens","year":"2003","journal-title":"Proc IEEE BCTM"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/4.628757"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2003.1249413"}],"event":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","acronym":"ESSCIR-04","location":"Leuven, Belgium"},"container-title":["Proceedings of the 30th European Solid-State Circuits Conference"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/9372\/29756\/01356674.pdf?arnumber=1356674","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,14]],"date-time":"2017-03-14T12:53:52Z","timestamp":1489496032000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/1356674\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[null]]},"references-count":10,"URL":"https:\/\/doi.org\/10.1109\/esscir.2004.1356674","relation":{},"subject":[]}}