{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,5,31]],"date-time":"2025-05-31T05:06:38Z","timestamp":1748667998259,"version":"3.28.0"},"reference-count":14,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2011,9]]},"DOI":"10.1109\/esscirc.2011.6044881","type":"proceedings-article","created":{"date-parts":[[2011,10,13]],"date-time":"2011-10-13T16:54:52Z","timestamp":1318524892000},"page":"127-130","source":"Crossref","is-referenced-by-count":36,"title":["A +32 dBm 1.85 GHz class-D outphasing RF PA in 130nm CMOS for WCDMA\/LTE"],"prefix":"10.1109","author":[{"given":"Jonas","family":"Fritzin","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Christer","family":"Svensson","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Atila","family":"Alvandpour","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2006.251229"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2008.4558942"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2007.916585"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/4.868049"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2006.872737"},{"key":"ref4","doi-asserted-by":"crossref","first-page":"411","DOI":"10.1109\/TCSII.2010.2048353","article-title":"A CMOS Outphasing Power Amplifier With Integrated Single-Ended Chireix Combiner","volume":"57","author":"lee","year":"2010","journal-title":"IEEE Trans Circuits Syst II Exp Briefs"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2011.5746382"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2005.843599"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/22.981284"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.911092"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2005.852546"},{"key":"ref2","first-page":"306","article-title":"A Highly Linear 25dBm Outphasing Power Amplifier in 32nm CMOS for WLAN Application","author":"xu","year":"2010","journal-title":"Eur Solid-State Circuits Conf"},{"key":"ref1","first-page":"206","article-title":"A 28.1dBm class-D Outphasing Power Amplifier in 45nm LP Digital CMOS","author":"xu","year":"2009","journal-title":"VLSI Symp"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2009.2039274"}],"event":{"name":"ESSCIRC 2011 - 37th European Solid State Circuits Conference","start":{"date-parts":[[2011,9,12]]},"location":"Helsinki, Finland","end":{"date-parts":[[2011,9,16]]}},"container-title":["2011 Proceedings of the ESSCIRC (ESSCIRC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/6034695\/6044880\/06044881.pdf?arnumber=6044881","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,20]],"date-time":"2017-06-20T03:55:36Z","timestamp":1497930936000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6044881\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2011,9]]},"references-count":14,"URL":"https:\/\/doi.org\/10.1109\/esscirc.2011.6044881","relation":{},"subject":[],"published":{"date-parts":[[2011,9]]}}}