{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,7]],"date-time":"2024-09-07T10:13:23Z","timestamp":1725704003636},"reference-count":14,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2012,9]]},"DOI":"10.1109\/esscirc.2012.6341251","type":"proceedings-article","created":{"date-parts":[[2012,11,15]],"date-time":"2012-11-15T12:07:41Z","timestamp":1352981261000},"page":"38-41","source":"Crossref","is-referenced-by-count":1,"title":["4-Port isolated MOS modeling and extraction for mmW applications"],"prefix":"10.1109","author":[{"given":"B.","family":"Dormieu","sequence":"first","affiliation":[]},{"given":"P.","family":"Scheer","sequence":"additional","affiliation":[]},{"given":"C.","family":"Charbuillet","sequence":"additional","affiliation":[]},{"given":"S.","family":"Jan","sequence":"additional","affiliation":[]},{"given":"F.","family":"Danneville","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"year":"0","key":"13"},{"key":"14","first-page":"961","article-title":"An effective gate resistance model for cmos rf and noise modeling","author":"jin","year":"1998","journal-title":"IEDM Tech Digest"},{"journal-title":"2-Port and 4-Port PNA-X Network Analyzer N5247A Data Sheet and Technical Specifications","year":"2012","key":"11"},{"key":"12","first-page":"1","article-title":"Competitive and cost effective highk based 28nm cmos technology for low power applications","author":"arnaud","year":"2009","journal-title":"IEEE Int Electron Devices Meeting"},{"key":"3","doi-asserted-by":"publisher","DOI":"10.1109\/RFIC.2006.1651193"},{"key":"2","doi-asserted-by":"publisher","DOI":"10.1109\/ASSCC.2009.5357240"},{"journal-title":"ITRS","year":"2011","key":"1"},{"key":"10","doi-asserted-by":"publisher","DOI":"10.1109\/ARFTG.2006.4734373"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2005.863132"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1049\/el.2010.0763"},{"key":"5","doi-asserted-by":"publisher","DOI":"10.1109\/ICMTS.2006.1614277"},{"key":"4","first-page":"185","article-title":"Rf noise of 65-nm MOSFETs in the weak-to-moderate-inversion region","author":"xiong","year":"2009","journal-title":"IEEE EDL"},{"key":"9","first-page":"1","article-title":"Mmw modeling of isolated mos substrate network through gate-bulk measurements","author":"dormieu","year":"2011","journal-title":"IEEE RFIC Symp"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2010.5537128"}],"event":{"name":"ESSCIRC 2012 - 38th European Solid State Circuits Conference","start":{"date-parts":[[2012,9,17]]},"location":"Bordeaux, France","end":{"date-parts":[[2012,9,21]]}},"container-title":["2012 Proceedings of the ESSCIRC (ESSCIRC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/6331297\/6341242\/06341251.pdf?arnumber=6341251","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,21]],"date-time":"2017-03-21T18:25:56Z","timestamp":1490120756000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6341251\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2012,9]]},"references-count":14,"URL":"https:\/\/doi.org\/10.1109\/esscirc.2012.6341251","relation":{},"subject":[],"published":{"date-parts":[[2012,9]]}}}