{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,3,24]],"date-time":"2025-03-24T07:56:37Z","timestamp":1742802997681},"reference-count":10,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2017,9]]},"DOI":"10.1109\/esscirc.2017.8094587","type":"proceedings-article","created":{"date-parts":[[2017,11,28]],"date-time":"2017-11-28T16:03:53Z","timestamp":1511885033000},"page":"308-311","source":"Crossref","is-referenced-by-count":4,"title":["An 800 Mhz mixed-V<inf>T<\/inf> 4T gain-cell embedded DRAM in 28 nm CMOS bulk process for approximate computing applications"],"prefix":"10.1109","author":[{"given":"Robert","family":"Giterman","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Alexander","family":"Fish","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Narkis","family":"Geuli","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Elad","family":"Mentovich","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Andreas","family":"Burg","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Adam","family":"Teman","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2014.2300417"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2011.2168729"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2015.2512706"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2012.2223467"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2014.6865600"},{"key":"ref8","first-page":"1","article-title":"Sparkk: Quality-scalable approximate storage in dram","author":"lucas","year":"2014","journal-title":"The Memory Forum"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1145\/2644808"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2008.2007155"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/NEWCAS.2015.7182027"},{"journal-title":"International Technology Roadmap for Semiconductors — 2015 Edition","article-title":"ITRS","year":"2015","key":"ref1"}],"event":{"name":"ESSCIRC 2017 - 43rd IEEE European Solid-State Circuits Conference","start":{"date-parts":[[2017,9,11]]},"location":"Leuven","end":{"date-parts":[[2017,9,14]]}},"container-title":["ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8061155\/8094509\/08094587.pdf?arnumber=8094587","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,12,13]],"date-time":"2017-12-13T19:21:47Z","timestamp":1513192907000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/8094587\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,9]]},"references-count":10,"URL":"https:\/\/doi.org\/10.1109\/esscirc.2017.8094587","relation":{},"subject":[],"published":{"date-parts":[[2017,9]]}}}