{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,8,30]],"date-time":"2025-08-30T16:22:26Z","timestamp":1756570946223},"reference-count":7,"publisher":"IEEE","license":[{"start":{"date-parts":[[2021,9,13]],"date-time":"2021-09-13T00:00:00Z","timestamp":1631491200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2021,9,13]],"date-time":"2021-09-13T00:00:00Z","timestamp":1631491200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2021,9,13]]},"DOI":"10.1109\/esscirc53450.2021.9567868","type":"proceedings-article","created":{"date-parts":[[2021,10,26]],"date-time":"2021-10-26T21:10:54Z","timestamp":1635282654000},"page":"311-314","source":"Crossref","is-referenced-by-count":2,"title":["A Pre-Charge Tracking Technique in the 40MHz High-switching 48-to-5V DC-DC Buck Converter with GaN Switches for Reducing Large Self-commutation Loss and Achieving a High Efficiency of 95.4%"],"prefix":"10.1109","author":[{"given":"Tzu-Hsien","family":"Yang","sequence":"first","affiliation":[{"name":"National Yang Ming Chiao Tung University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chun-Kai","family":"Chiu","sequence":"additional","affiliation":[{"name":"National Yang Ming Chiao Tung University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yong-Hwa","family":"Wen","sequence":"additional","affiliation":[{"name":"National Yang Ming Chiao Tung University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ke-Horng","family":"Chen","sequence":"additional","affiliation":[{"name":"National Yang Ming Chiao Tung University"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ying-Hsi","family":"Lin","sequence":"additional","affiliation":[{"name":"Realtek Semiconductor Corp,Hsinchu,Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shian-Ru","family":"Lin","sequence":"additional","affiliation":[{"name":"Realtek Semiconductor Corp,Hsinchu,Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Tsung-Yen","family":"Tsai","sequence":"additional","affiliation":[{"name":"Realtek Semiconductor Corp,Hsinchu,Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","first-page":"250","article-title":"An 8.3MHz GaN Power Converter Using Markov Continuous RSSM for 35dBµV Conducted EMI Attenuation and One TON Rebalancing for 27.6dB VO Jittering Suppression","author":"yingping","year":"2019","journal-title":"ISSCC Dig Tech Papers"},{"key":"ref3","first-page":"386","article-title":"A 3-to-40V VIN 10-to-50MHz 12W Isolated GaN Driver with Self-Excited tdead Minimizer Achieving 0.2ns\/0.3ns tdead, 7.9% Minimum Duty Ratio and 50V\/ns CMTI","author":"xugang","year":"2018","journal-title":"ISSCC Dig Tech Papers"},{"key":"ref6","first-page":"460","article-title":"33.1 A Fully Integrated GaN-on-Silicon Gate Driver and GaN Switch with Temperature-compensated Fast Turn-on Technique for Improving Reliability","author":"chen","year":"2021","journal-title":"ISSCC Dig Tech Papers"},{"key":"ref5","first-page":"196","article-title":"A 48-to-80V Input 2MHz Adaptive ZVT-Assisted GaNBased Bus Converter Achieving 14% Light-Load Efficiency Improvement","author":"cheng","year":"2020","journal-title":"ISSCC Dig Tech Papers"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/VLSICircuits18222.2020.9162979"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2016.7418027"},{"key":"ref1","first-page":"430","article-title":"A 10MHz 3-to-40V VIN Tri-Slope Gate Driving GaN DC-DC Converter with 40.5dBµV Spurious Noise Compression and 79.3% Ringing Suppression for Automotive Applications","author":"ke","year":"2017","journal-title":"ISSCC Dig Tech Papers"}],"event":{"name":"ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC)","start":{"date-parts":[[2021,9,13]]},"location":"Grenoble, France","end":{"date-parts":[[2021,9,22]]}},"container-title":["ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9567713\/9567736\/09567868.pdf?arnumber=9567868","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,8,2]],"date-time":"2022-08-02T23:38:50Z","timestamp":1659483530000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9567868\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,9,13]]},"references-count":7,"URL":"https:\/\/doi.org\/10.1109\/esscirc53450.2021.9567868","relation":{},"subject":[],"published":{"date-parts":[[2021,9,13]]}}}