{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,22]],"date-time":"2024-10-22T16:53:44Z","timestamp":1729616024721,"version":"3.28.0"},"reference-count":15,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2012,9]]},"DOI":"10.1109\/essderc.2012.6343351","type":"proceedings-article","created":{"date-parts":[[2012,11,15]],"date-time":"2012-11-15T17:06:42Z","timestamp":1352999202000},"page":"133-136","source":"Crossref","is-referenced-by-count":3,"title":["Mechanically flexible double gate a-IGZO TFTs"],"prefix":"10.1109","author":[{"given":"Niko","family":"Munzenrieder","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Christoph","family":"Zysset","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Thomas","family":"Kinkeldei","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Luisa","family":"Petti","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Giovanni A.","family":"Salvatore","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Gerhard","family":"Troster","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"15","doi-asserted-by":"publisher","DOI":"10.1016\/S0022-3093(99)00944-8"},{"key":"13","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2009.2038805"},{"key":"14","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2143416"},{"key":"11","doi-asserted-by":"crossref","DOI":"10.1088\/0268-1242\/24\/1\/015013","article-title":"Charge trapping and detrapping characteristics in amorphous ingazno tfts under static and dynamic stresses","author":"cho","year":"2009","journal-title":"Semicond Sci Technol"},{"key":"12","doi-asserted-by":"publisher","DOI":"10.1109\/55.962653"},{"key":"3","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2007.907411"},{"key":"2","doi-asserted-by":"publisher","DOI":"10.1021\/cm980672c"},{"key":"1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201002159"},{"key":"10","doi-asserted-by":"crossref","first-page":"619","DOI":"10.1149\/1.1836489","article-title":"Kinetics and modeling of wet etching of aluminum oxide by warm phosphoric acid","volume":"143","author":"zhou","year":"1996","journal-title":"J Electrochem Soc"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2009.2033392"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1063\/1.3578403"},{"key":"5","doi-asserted-by":"crossref","first-page":"63505","DOI":"10.1063\/1.2967456","article-title":"Double gate gainzno thin film transistors","volume":"93","author":"lim","year":"2008","journal-title":"Appl Phys Lett"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1038\/nature03090"},{"key":"9","doi-asserted-by":"publisher","DOI":"10.1063\/1.3118575"},{"journal-title":"Physics of Semiconductor Devices","year":"2007","author":"sze","key":"8"}],"event":{"name":"ESSDERC 2012 - 42nd European Solid State Device Research Conference","start":{"date-parts":[[2012,9,17]]},"location":"Bordeaux, France","end":{"date-parts":[[2012,9,21]]}},"container-title":["2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/6331298\/6343319\/06343351.pdf?arnumber=6343351","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,21]],"date-time":"2017-06-21T02:43:06Z","timestamp":1498012986000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6343351\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2012,9]]},"references-count":15,"URL":"https:\/\/doi.org\/10.1109\/essderc.2012.6343351","relation":{},"subject":[],"published":{"date-parts":[[2012,9]]}}}