{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,15]],"date-time":"2025-11-15T17:00:17Z","timestamp":1763226017529,"version":"3.28.0"},"reference-count":17,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2012,9]]},"DOI":"10.1109\/essderc.2012.6343367","type":"proceedings-article","created":{"date-parts":[[2012,11,15]],"date-time":"2012-11-15T12:06:42Z","timestamp":1352981202000},"page":"197-200","source":"Crossref","is-referenced-by-count":8,"title":["Z<sup>2<\/sup>-FET used as 1-transistor high-speed DRAM"],"prefix":"10.1109","author":[{"given":"Jing","family":"Wan","sequence":"first","affiliation":[]},{"given":"Cyrille","family":"Le Royer","sequence":"additional","affiliation":[]},{"given":"Alexander","family":"Zaslavsky","sequence":"additional","affiliation":[]},{"given":"Sorin","family":"Cristoloveanu","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"17","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2008.4796643"},{"key":"15","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2011.06.012"},{"year":"0","key":"16"},{"key":"13","doi-asserted-by":"crossref","first-page":"179","DOI":"10.1109\/LED.2011.2176908","article-title":"A compact capacitor-less high-speed dram using field effect-controlled charge regeneration","volume":"33","author":"wan","year":"2011","journal-title":"Electron Device Letters IEEE"},{"key":"14","first-page":"163","article-title":"Impact of soi, si1-xgexoi and geoi substrates on cmos compatible tunnel fet performance","author":"mayer","year":"2008","journal-title":"Int Electron Devices Meeting Tech Dig"},{"key":"11","doi-asserted-by":"publisher","DOI":"10.1109\/ISDRS.2009.5378045"},{"key":"12","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2177239"},{"key":"3","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2008.2000601"},{"key":"2","first-page":"339","volume":"4","author":"mueller","year":"2005","journal-title":"Challenges for the DRAM Cell Scaling to 40nm"},{"key":"1","first-page":"132","article-title":"A 31ns random cycle vcat-based 4f2 dram with enhanced cell efficiency","author":"song","year":"2009","journal-title":"Proc Symp VLSI Circuits"},{"key":"10","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2006.346971"},{"key":"7","first-page":"311","article-title":"A novel capacitor-less dram cell using thin capacitively-coupled thyristor (tcct)","author":"cho","year":"2005","journal-title":"Int Electron Devices Meeting Tech Dig"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2007.4419103"},{"key":"5","doi-asserted-by":"crossref","first-page":"676","DOI":"10.1016\/j.sse.2009.03.010","article-title":"Overview and future challenges of floating body ram (fbram) technology for 32 nm technology node and beyond","volume":"53","author":"hamamoto","year":"2009","journal-title":"Solid-State Electronics"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2006.870283"},{"key":"9","doi-asserted-by":"publisher","DOI":"10.1109\/SOI.2006.284460"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2010.5703345"}],"event":{"name":"ESSDERC 2012 - 42nd European Solid State Device Research Conference","start":{"date-parts":[[2012,9,17]]},"location":"Bordeaux, France","end":{"date-parts":[[2012,9,21]]}},"container-title":["2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/6331298\/6343319\/06343367.pdf?arnumber=6343367","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,20]],"date-time":"2017-06-20T22:43:09Z","timestamp":1497998589000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6343367\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2012,9]]},"references-count":17,"URL":"https:\/\/doi.org\/10.1109\/essderc.2012.6343367","relation":{},"subject":[],"published":{"date-parts":[[2012,9]]}}}