{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,3]],"date-time":"2024-09-03T23:09:36Z","timestamp":1725404976572},"reference-count":11,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2012,9]]},"DOI":"10.1109\/essderc.2012.6343369","type":"proceedings-article","created":{"date-parts":[[2012,11,15]],"date-time":"2012-11-15T12:06:42Z","timestamp":1352981202000},"page":"205-208","source":"Crossref","is-referenced-by-count":3,"title":["An advanced statistical compact model strategy for SRAM simulation at reduced V<inf>DD<\/inf>"],"prefix":"10.1109","author":[{"given":"P.","family":"Asenov","sequence":"first","affiliation":[]},{"given":"D.","family":"Reid","sequence":"additional","affiliation":[]},{"given":"S.","family":"Roy","sequence":"additional","affiliation":[]},{"given":"C.","family":"Millar","sequence":"additional","affiliation":[]},{"given":"A.","family":"Asenov","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"3","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDER.2006.307735"},{"key":"2","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2003.813457"},{"key":"10","doi-asserted-by":"publisher","DOI":"10.1109\/MDT.2010.53"},{"key":"1","doi-asserted-by":"publisher","DOI":"10.1109\/16.915703"},{"journal-title":"Direct Measurements Analysis and Post-Fabrication Improvement of Noise Margins in SRAM Cells Utilizing DMA SRAM TEG 2010 Symposium on VLSI Technology Digest of Technical Papers P191-19","year":"0","author":"suzuki","key":"7"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1109\/SISPAD.2011.6035024"},{"key":"5","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2006.873215"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2007.909792"},{"key":"9","first-page":"86","article-title":"Symposium on vlsi technology","author":"asenov","year":"2007","journal-title":"Simulation of Statistical Variability in Nano MOSFETs in"},{"year":"0","key":"8"},{"key":"11","first-page":"347","article-title":"Variability in sub-100nm sram designs","author":"herald","year":"2004","journal-title":"Proc Int Conf Comput -Aided Des"}],"event":{"name":"ESSDERC 2012 - 42nd European Solid State Device Research Conference","start":{"date-parts":[[2012,9,17]]},"location":"Bordeaux, France","end":{"date-parts":[[2012,9,21]]}},"container-title":["2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/6331298\/6343319\/06343369.pdf?arnumber=6343369","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,21]],"date-time":"2017-03-21T19:11:44Z","timestamp":1490123504000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6343369\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2012,9]]},"references-count":11,"URL":"https:\/\/doi.org\/10.1109\/essderc.2012.6343369","relation":{},"subject":[],"published":{"date-parts":[[2012,9]]}}}