{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,16]],"date-time":"2026-05-16T09:19:00Z","timestamp":1778923140208,"version":"3.51.4"},"reference-count":8,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2012,9]]},"DOI":"10.1109\/essderc.2012.6343386","type":"proceedings-article","created":{"date-parts":[[2012,11,15]],"date-time":"2012-11-15T17:06:42Z","timestamp":1352999202000},"page":"274-277","source":"Crossref","is-referenced-by-count":30,"title":["Random Telegraph Signal noise properties of HfOx RRAM in high resistive state"],"prefix":"10.1109","author":[{"given":"Francesco M.","family":"Puglisi","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Paolo","family":"Pavan","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Andrea","family":"Padovani","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Luca","family":"Larcher","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Gennadi","family":"Bersuker","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"3","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2011.6131574"},{"key":"2","first-page":"729","article-title":"10x10 nm2 Hf\/HfOx Crossbar Resistive RAM with Excellent Performance, Reliability and Low-Energy Operation","author":"govoreanu","year":"2011","journal-title":"IEEE IEDM Tech Digest"},{"key":"1","first-page":"51","article-title":"A high performance phase-change memory with fast switching speed and high temperature retention by engineering the gexsbytez phase change material","author":"cheng","year":"2011","journal-title":"IEEE IEDM Tech Digest"},{"key":"7","article-title":"Fast state discovery for hmm model selection and learning","author":"siddiqi","year":"2007","journal-title":"Proc AISTATS"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1109\/5.18626"},{"key":"5","first-page":"1","article-title":"Physical mechanism of hfo2-based bipolar resistive random access memory","author":"chang","year":"2011","journal-title":"Proc Int Symp VLSI Technology Systems Applications (VLSI-TSA)"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1063\/1.3671565"},{"key":"8","doi-asserted-by":"crossref","DOI":"10.1109\/TED.2011.2158825","article-title":"A physical model of the temperature dependence of the current through sio2\/hfo2 stacks","volume":"58","author":"vandelli","year":"2011","journal-title":"IEEE Trans Electron Devices"}],"event":{"name":"ESSDERC 2012 - 42nd European Solid State Device Research Conference","location":"Bordeaux, France","start":{"date-parts":[[2012,9,17]]},"end":{"date-parts":[[2012,9,21]]}},"container-title":["2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/6331298\/6343319\/06343386.pdf?arnumber=6343386","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,21]],"date-time":"2017-06-21T02:43:07Z","timestamp":1498012987000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6343386\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2012,9]]},"references-count":8,"URL":"https:\/\/doi.org\/10.1109\/essderc.2012.6343386","relation":{},"subject":[],"published":{"date-parts":[[2012,9]]}}}