{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,6]],"date-time":"2024-09-06T15:40:39Z","timestamp":1725637239046},"reference-count":16,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2012,9]]},"DOI":"10.1109\/essderc.2012.6343391","type":"proceedings-article","created":{"date-parts":[[2012,11,15]],"date-time":"2012-11-15T12:06:42Z","timestamp":1352981202000},"page":"294-297","source":"Crossref","is-referenced-by-count":1,"title":["Tin nanowire field effect transistor"],"prefix":"10.1109","author":[{"given":"Lida","family":"Ansari","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Giorgos","family":"Fagas","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"James C.","family":"Greer","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"journal-title":"FinFETs and Other Multi-Gate Transistors","year":"2007","author":"colinge","key":"15"},{"journal-title":"Electronic Conduction in Mesoscopic Systems","year":"1996","author":"datta","key":"16"},{"key":"13","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.57.6485"},{"key":"14","doi-asserted-by":"publisher","DOI":"10.1119\/1.2149869"},{"year":"0","author":"ozaki","key":"11"},{"key":"12","doi-asserted-by":"publisher","DOI":"10.1016\/0039-6028(83)90691-X"},{"key":"3","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2003.12.020"},{"key":"2","doi-asserted-by":"publisher","DOI":"10.1364\/OL.34.001198"},{"key":"1","doi-asserted-by":"publisher","DOI":"10.1021\/nl061287m"},{"key":"10","doi-asserted-by":"publisher","DOI":"10.1021\/nl2040817"},{"key":"7","article-title":"Random dopant variation in junctionless nanowire transistors","author":"dehdashti akhavan","year":"2011","journal-title":"Proc IEEE International SOI Conference USA"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1063\/1.3478012"},{"key":"5","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2010.15"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2008.2005154"},{"key":"9","doi-asserted-by":"publisher","DOI":"10.1063\/1.1777022"},{"key":"8","first-page":"1044","article-title":"Short channel junctionless nanowire transistors","author":"lee","year":"2010","journal-title":"Proc Solid-State Devices and Materials Conference (SSDM) Japan"}],"event":{"name":"ESSDERC 2012 - 42nd European Solid State Device Research Conference","start":{"date-parts":[[2012,9,17]]},"location":"Bordeaux, France","end":{"date-parts":[[2012,9,21]]}},"container-title":["2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/6331298\/6343319\/06343391.pdf?arnumber=6343391","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,21]],"date-time":"2017-03-21T18:56:40Z","timestamp":1490122600000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6343391\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2012,9]]},"references-count":16,"URL":"https:\/\/doi.org\/10.1109\/essderc.2012.6343391","relation":{},"subject":[],"published":{"date-parts":[[2012,9]]}}}