{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,22]],"date-time":"2024-10-22T18:29:40Z","timestamp":1729621780275,"version":"3.28.0"},"reference-count":12,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2012,9]]},"DOI":"10.1109\/essderc.2012.6343393","type":"proceedings-article","created":{"date-parts":[[2012,11,15]],"date-time":"2012-11-15T12:06:42Z","timestamp":1352981202000},"page":"302-305","source":"Crossref","is-referenced-by-count":2,"title":["High temperature behaviour of GaN-on-Si high power MISHEMT devices"],"prefix":"10.1109","author":[{"given":"Dirk","family":"Wellekens","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Rafael","family":"Venegas","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xuanwu","family":"Kang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Mohammed","family":"Zahid","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Tian-Li","family":"Wu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Denis","family":"Marcon","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Puneet","family":"Srivastava","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Marleen","family":"Van Hove","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Stefaan","family":"Decoutere","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"3","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2006.02.008"},{"key":"2","doi-asserted-by":"crossref","DOI":"10.1143\/JJAP.38.L987","article-title":"Superior pinch-off characteristics at 400\ufffdc in algan\/gan heterostructure field effect transistors","volume":"38","author":"maeda","year":"1999","journal-title":"Jpn J Appl Phys"},{"key":"10","doi-asserted-by":"publisher","DOI":"10.1166\/nnl.2010.1063"},{"key":"1","doi-asserted-by":"publisher","DOI":"10.1063\/1.117133"},{"key":"7","first-page":"101","article-title":"Comparative high-temperature dc characterization of hemts with gan and algan channel layers","author":"hatano","year":"2010","journal-title":"Proc CS MANTECH Conference Portland (USA)"},{"key":"6","first-page":"53","article-title":"Performance of algan\/gan heterostructure field effect transistors at higher ambient temperatures","volume":"59","author":"florovic","year":"2008","journal-title":"J Electr Eng"},{"key":"5","doi-asserted-by":"publisher","DOI":"10.1002\/pssc.200778555"},{"key":"4","article-title":"Optimisation of high temperature performance and reliability of gan hfets","volume":"a10","author":"houston","year":"2006","journal-title":"Proc 3rd EMRS DTC Tech Conf Edinburgh (U K)"},{"key":"9","doi-asserted-by":"crossref","first-page":"7889","DOI":"10.1143\/JJAP.44.7889","article-title":"High temperature characteristics of insulated-gate algan\/gan heterostructure field-effect transistors with ultrathin al2o3\/si3n4 bilayer","volume":"44","author":"wang","year":"2005","journal-title":"Jpn J Appl Phys"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1088\/1674-1056\/20\/11\/117302"},{"key":"11","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2012.2188016"},{"key":"12","doi-asserted-by":"publisher","DOI":"10.1063\/1.3702458"}],"event":{"name":"ESSDERC 2012 - 42nd European Solid State Device Research Conference","start":{"date-parts":[[2012,9,17]]},"location":"Bordeaux, France","end":{"date-parts":[[2012,9,21]]}},"container-title":["2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/6331298\/6343319\/06343393.pdf?arnumber=6343393","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,20]],"date-time":"2017-06-20T22:43:08Z","timestamp":1497998588000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6343393\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2012,9]]},"references-count":12,"URL":"https:\/\/doi.org\/10.1109\/essderc.2012.6343393","relation":{},"subject":[],"published":{"date-parts":[[2012,9]]}}}