{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,3]],"date-time":"2024-09-03T17:51:34Z","timestamp":1725385894116},"reference-count":7,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2012,9]]},"DOI":"10.1109\/essderc.2012.6343395","type":"proceedings-article","created":{"date-parts":[[2012,11,15]],"date-time":"2012-11-15T17:06:42Z","timestamp":1352999202000},"page":"310-313","source":"Crossref","is-referenced-by-count":2,"title":["Critical gate module process enabling the implementation of a 50A\/600V AlGaN\/GaN MOS-HEMT"],"prefix":"10.1109","author":[{"given":"S. G.","family":"Khalil","sequence":"first","affiliation":[]},{"given":"R.","family":"Chu","sequence":"additional","affiliation":[]},{"given":"R.","family":"Li","sequence":"additional","affiliation":[]},{"given":"D.","family":"Wong","sequence":"additional","affiliation":[]},{"given":"S.","family":"Newell","sequence":"additional","affiliation":[]},{"given":"X.","family":"Chen","sequence":"additional","affiliation":[]},{"given":"M.","family":"Chen","sequence":"additional","affiliation":[]},{"given":"D.","family":"Zehnder","sequence":"additional","affiliation":[]},{"given":"S.","family":"Kim","sequence":"additional","affiliation":[]},{"given":"A.","family":"Corrion","sequence":"additional","affiliation":[]},{"given":"B.","family":"Hughes","sequence":"additional","affiliation":[]},{"given":"K.","family":"Boutros","sequence":"additional","affiliation":[]},{"given":"C.","family":"Namuduri","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"3","first-page":"213","article-title":"Normally-off gate-recessed algan\/gan-on-si hybrid mos-hfet with al2o3 gate dielectric","author":"corrion","year":"2011","journal-title":"Proc DRC"},{"key":"2","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2009.5424396"},{"key":"1","first-page":"35","article-title":"The next stage in the commercialization of gan-based power devices","author":"briere","year":"2010","journal-title":"Power Electronics Europe"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.1063\/1.3645616"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2118190"},{"key":"5","doi-asserted-by":"publisher","DOI":"10.1002\/pssc.200983644"},{"key":"4","first-page":"251","article-title":"High-power algan\/gan mis-hfets with field-plates on si substrates","author":"ikeda","year":"2009","journal-title":"Proc ISPSD"}],"event":{"name":"ESSDERC 2012 - 42nd European Solid State Device Research Conference","start":{"date-parts":[[2012,9,17]]},"location":"Bordeaux, France","end":{"date-parts":[[2012,9,21]]}},"container-title":["2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/6331298\/6343319\/06343395.pdf?arnumber=6343395","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,21]],"date-time":"2017-03-21T22:56:32Z","timestamp":1490136992000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6343395\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2012,9]]},"references-count":7,"URL":"https:\/\/doi.org\/10.1109\/essderc.2012.6343395","relation":{},"subject":[],"published":{"date-parts":[[2012,9]]}}}