{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,8]],"date-time":"2024-09-08T03:32:41Z","timestamp":1725766361771},"reference-count":16,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2013,9]]},"DOI":"10.1109\/essderc.2013.6818852","type":"proceedings-article","created":{"date-parts":[[2014,5,30]],"date-time":"2014-05-30T14:34:21Z","timestamp":1401460461000},"page":"194-197","source":"Crossref","is-referenced-by-count":1,"title":["Threshold voltage extraction techniques and temperature effect in context of global variability in UTBB mosfets"],"prefix":"10.1109","author":[{"given":"S.","family":"Makovejev","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"B. Kazemi","family":"Esfeh","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"J.-P.","family":"Raskin","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"D.","family":"Flandre","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"V.","family":"Kilchytska","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"F.","family":"Andrieu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"15","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2012.2205659"},{"key":"16","doi-asserted-by":"publisher","DOI":"10.1109\/ULIS.2011.5758013"},{"key":"13","doi-asserted-by":"publisher","DOI":"10.1049\/el:19880369"},{"key":"14","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2011.10.027"},{"key":"11","first-page":"473","article-title":"Accurate Determination of Transport Parameters in Sub-65 nm MOS Transistors","author":"mouis","year":"2010","journal-title":"Nanoscale CMOS Innovative Materials Modeling and Characterization"},{"key":"12","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2055829"},{"key":"3","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2155658"},{"key":"2","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.911354"},{"key":"1","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2010.5556120"},{"key":"10","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2011.6131613"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2040664"},{"journal-title":"\"Modeling and Simulation of Statistical Variability in Nanometer CMOS Technologies \" in Analog Circuit Design","year":"2011","author":"asenov","key":"6"},{"key":"5","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2008.4796663"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1109\/SOI.2011.6081717"},{"key":"9","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2157162"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1109\/VTSA.2010.5488928"}],"event":{"name":"ESSDERC 2013 - 43rd European Solid State Device Research Conference","start":{"date-parts":[[2013,9,16]]},"location":"Bucharest, Romania","end":{"date-parts":[[2013,9,20]]}},"container-title":["2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6811819\/6818804\/06818852.pdf?arnumber=6818852","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,23]],"date-time":"2017-03-23T12:00:12Z","timestamp":1490270412000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6818852\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2013,9]]},"references-count":16,"URL":"https:\/\/doi.org\/10.1109\/essderc.2013.6818852","relation":{},"subject":[],"published":{"date-parts":[[2013,9]]}}}