{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,6,18]],"date-time":"2025-06-18T01:34:47Z","timestamp":1750210487024,"version":"3.28.0"},"reference-count":10,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2013,9]]},"DOI":"10.1109\/essderc.2013.6818864","type":"proceedings-article","created":{"date-parts":[[2014,5,30]],"date-time":"2014-05-30T18:34:21Z","timestamp":1401474861000},"page":"242-245","source":"Crossref","is-referenced-by-count":5,"title":["Characterization of n-channel MOSFETs: Electrical measurements and simulation analysis"],"prefix":"10.1109","author":[{"given":"V.","family":"Uhnevionak","sequence":"first","affiliation":[{"name":"Fraunhofer Institute for Integrated Systems and Device Technology, Erlangen, Germany"}]},{"given":"C.","family":"Strenger","sequence":"additional","affiliation":[{"name":"Fraunhofer Institute for Integrated Systems and Device Technology, Erlangen, Germany"}]},{"given":"A.","family":"Burenkov","sequence":"additional","affiliation":[{"name":"Fraunhofer Institute for Integrated Systems and Device Technology, Erlangen, Germany"}]},{"given":"V.","family":"Mortet","sequence":"additional","affiliation":[{"name":"LAAS-CNRS, Toulouse, France"}]},{"given":"E.","family":"Bedel-Pereira","sequence":"additional","affiliation":[{"name":"LAAS-CNRS, Toulouse, France"}]},{"given":"J","family":"Lorenz","sequence":"additional","affiliation":[{"name":"Fraunhofer Institute for Integrated Systems and Device Technology, Erlangen, Germany"}]},{"given":"P.","family":"Pichler","sequence":"additional","affiliation":[{"name":"Fraunhofer Institute for Integrated Systems and Device Technology, Erlangen, Germany"}]}],"member":"263","reference":[{"key":"3","article-title":"Hall factor calculation for the characterization of SiC MOSFETs","author":"uhnevionak","year":"0","journal-title":"International Conference on Silicon Carbide and Related Materials (ICSCRM) Japan September 29-October 4 2013"},{"key":"2","doi-asserted-by":"crossref","first-page":"405","DOI":"10.1016\/S0026-2714(02)00313-X","article-title":"Channel-carrier mobility parameters for 4H SiC MOSFETs","volume":"43","author":"linewih","year":"2003","journal-title":"Microelectronics Reliability"},{"journal-title":"Design and Application of SiC Power MOSFET","year":"2002","author":"linewih","key":"1"},{"journal-title":"Sentaurus Device User Guide","year":"2010","key":"10"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.740-742.533"},{"journal-title":"Silicon Carbide Recent Major Advances","year":"2004","author":"saks","key":"6"},{"journal-title":"Modeling and Characterization of 4H-SIC MOSFETs High Field High Temperature and Transient Effects","year":"2008","author":"potbhare","key":"5"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.740-742.525"},{"key":"9","doi-asserted-by":"publisher","DOI":"10.1063\/1.2395597"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1063\/1.3484043"}],"event":{"name":"ESSDERC 2013 - 43rd European Solid State Device Research Conference","start":{"date-parts":[[2013,9,16]]},"location":"Bucharest, Romania","end":{"date-parts":[[2013,9,20]]}},"container-title":["2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6811819\/6818804\/06818864.pdf?arnumber=6818864","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,6,8]],"date-time":"2021-06-08T07:33:46Z","timestamp":1623137626000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/6818864\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2013,9]]},"references-count":10,"URL":"https:\/\/doi.org\/10.1109\/essderc.2013.6818864","relation":{},"subject":[],"published":{"date-parts":[[2013,9]]}}}