{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,23]],"date-time":"2024-10-23T06:19:13Z","timestamp":1729664353391,"version":"3.28.0"},"reference-count":9,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2013,9]]},"DOI":"10.1109\/essderc.2013.6818877","type":"proceedings-article","created":{"date-parts":[[2014,5,30]],"date-time":"2014-05-30T14:34:21Z","timestamp":1401460461000},"page":"296-299","source":"Crossref","is-referenced-by-count":2,"title":["Magnetoresistance measurements and unusual mobilitiy behavior in FD MOSFETs"],"prefix":"10.1109","author":[{"given":"Sung-Jae","family":"Chang","sequence":"first","affiliation":[]},{"given":"Sorin","family":"Cristoloveanu","sequence":"additional","affiliation":[]},{"given":"Maryline","family":"Bawedin","sequence":"additional","affiliation":[]},{"given":"Jong-Hyun","family":"Lee","sequence":"additional","affiliation":[]},{"given":"Jung-Hee","family":"Lee","sequence":"additional","affiliation":[]},{"given":"S.","family":"Mukhopadhyay","sequence":"additional","affiliation":[]},{"given":"B. A.","family":"Piot","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"3","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2046109"},{"key":"2","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2009.2027141"},{"key":"1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2181816"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2006.03.035"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1063\/1.1806991"},{"key":"5","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.2210430122"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2012.2198193"},{"key":"9","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2008.2011573"},{"key":"8","doi-asserted-by":"crossref","first-page":"84503","DOI":"10.1063\/1.3097764","article-title":"A comprehensive study of magnetoresistance mobilty in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors","volume":"105","author":"cassse","year":"2009","journal-title":"J Appl Phys"}],"event":{"name":"ESSDERC 2013 - 43rd European Solid State Device Research Conference","start":{"date-parts":[[2013,9,16]]},"location":"Bucharest, Romania","end":{"date-parts":[[2013,9,20]]}},"container-title":["2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6811819\/6818804\/06818877.pdf?arnumber=6818877","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,22]],"date-time":"2017-06-22T10:07:28Z","timestamp":1498126048000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6818877\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2013,9]]},"references-count":9,"URL":"https:\/\/doi.org\/10.1109\/essderc.2013.6818877","relation":{},"subject":[],"published":{"date-parts":[[2013,9]]}}}