{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,11]],"date-time":"2025-11-11T13:08:26Z","timestamp":1762866506655,"version":"3.28.0"},"reference-count":10,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2014,9]]},"DOI":"10.1109\/essderc.2014.6948827","type":"proceedings-article","created":{"date-parts":[[2014,11,12]],"date-time":"2014-11-12T17:53:35Z","timestamp":1415814815000},"page":"329-332","source":"Crossref","is-referenced-by-count":6,"title":["The effect of the surface fixed charge and donor traps on the C(V) and transfer characteristics of a GaN MISFET — Experiment and TCAD simulations"],"prefix":"10.1109","author":[{"given":"Giorgia","family":"Longobardi","sequence":"first","affiliation":[]},{"given":"Florin","family":"Udrea","sequence":"additional","affiliation":[]},{"given":"Stephen","family":"Sque","sequence":"additional","affiliation":[]},{"given":"Jeroen","family":"Croon","sequence":"additional","affiliation":[]},{"given":"Fred","family":"Hurkx","sequence":"additional","affiliation":[]},{"given":"Jan","family":"Sonsky","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"3","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2290471"},{"key":"2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1452773"},{"key":"10","first-page":"259","article-title":"600V-900V GaN-on-Si Process technology for Schottky barrier diodes and power switches fabricated in a standard Si production fab","author":"donkers","year":"2013","journal-title":"Proc CSMANTECH"},{"key":"1","doi-asserted-by":"publisher","DOI":"10.1063\/1.126940"},{"key":"7","first-page":"2003","volume":"21","author":"hashizume","year":"1828","journal-title":"Sci Technol B"},{"key":"6","doi-asserted-by":"crossref","first-page":"173504","DOI":"10.1063\/1.2198507","volume":"88","author":"liu","year":"2006","journal-title":"Appl Phys Lett"},{"journal-title":"AlGaN\/GaN-based power semiconductor switches","year":"2013","author":"liu","key":"5"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2006.890592"},{"key":"9","doi-asserted-by":"crossref","first-page":"1045101","DOI":"10.1063\/1.2924334","article-title":"Effects of interface states and temperature on the CV behavior of metal\/insulator\/AlGaN\/GaN heterostructure capacitors","volume":"103","author":"miczek","year":"2008","journal-title":"J Appl Phys"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1063\/1.3428442"}],"event":{"name":"ESSDERC 2014 - 44th European Solid State Device Research Conference","start":{"date-parts":[[2014,9,22]]},"location":"Venice Lido, Italy","end":{"date-parts":[[2014,9,26]]}},"container-title":["2014 44th European Solid State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6926646\/6948742\/06948827.pdf?arnumber=6948827","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,22]],"date-time":"2017-06-22T20:03:42Z","timestamp":1498161822000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6948827\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2014,9]]},"references-count":10,"URL":"https:\/\/doi.org\/10.1109\/essderc.2014.6948827","relation":{},"subject":[],"published":{"date-parts":[[2014,9]]}}}