{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,21]],"date-time":"2025-11-21T17:50:29Z","timestamp":1763747429659},"reference-count":9,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,9]]},"DOI":"10.1109\/essderc.2015.7324715","type":"proceedings-article","created":{"date-parts":[[2015,11,12]],"date-time":"2015-11-12T23:03:10Z","timestamp":1447369390000},"source":"Crossref","is-referenced-by-count":3,"title":["Experimental analysis of planar edge terminations for high voltage 4H-SiC devices"],"prefix":"10.1109","author":[{"given":"V.","family":"Soler","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"M.","family":"Berthou","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"A.","family":"Mihaila","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"J.","family":"Montserrat","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"P.","family":"Godignon","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"J.","family":"Rebollo","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"J.","family":"Millan","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2005.856805"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.778-780.824"},{"key":"ref6","author":"berthou","year":"2012","journal-title":"Implementation of High Voltage Silicon Carbide Rectifiers and Switches"},{"key":"ref5","first-page":"253","article-title":"Guard ring assisted Resurf: A new termination structure providing stable and high breakdown voltage for SiC power devices","author":"kinoshita","year":"2002","journal-title":"Proc of the ISPSD"},{"key":"ref8","article-title":"Estimate of avalanche breakdown voltage in4H-SiC","author":"zachary","year":"2012","journal-title":"ed Future Energy Systems Annual Conference Rensselaer Polytechnic Institute General Electric Global Research"},{"key":"ref7","article-title":"Silicon Carbide power devices","author":"baliga","year":"2005","journal-title":"World Scientific Publishing Co"},{"key":"ref2","year":"0","journal-title":"Silicon Carbide Power Electronics Technology for Energy Efficient Devices (SPEED) FP7–2013-NMP project no 6485"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2003.815144"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2268900"}],"event":{"name":"ESSDERC 2015 - 45th European Solid-State Device Research Conference","location":"Graz, Austria","start":{"date-parts":[[2015,9,14]]},"end":{"date-parts":[[2015,9,18]]}},"container-title":["2015 45th European Solid State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7300344\/7324696\/07324715.pdf?arnumber=7324715","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,25]],"date-time":"2017-03-25T02:34:46Z","timestamp":1490409286000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7324715\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,9]]},"references-count":9,"URL":"https:\/\/doi.org\/10.1109\/essderc.2015.7324715","relation":{},"subject":[],"published":{"date-parts":[[2015,9]]}}}