{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,6]],"date-time":"2026-04-06T05:54:08Z","timestamp":1775454848009,"version":"3.50.1"},"reference-count":17,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,9]]},"DOI":"10.1109\/essderc.2015.7324716","type":"proceedings-article","created":{"date-parts":[[2015,11,12]],"date-time":"2015-11-12T18:03:10Z","timestamp":1447351390000},"page":"72-75","source":"Crossref","is-referenced-by-count":3,"title":["On the fly characterization of charge trapping phenomena at GaN\/dielectric and GaN\/AlGaN\/dielectric interfaces using impedance measurements"],"prefix":"10.1109","author":[{"given":"Roberta","family":"Stradiotto","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Gregor","family":"Pobegen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Clemens","family":"Ostermaier","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Tibor","family":"Grasser","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2303853"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1063\/1.4905945"},{"key":"ref12","article-title":"The effect of the surface fixed charge and donor traps on the CV and transfer characteristics of a GaN MISFET","author":"longobardi","year":"2014","journal-title":"Proc Eur Solid State Device Conf"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2008.2002353"},{"key":"ref14","article-title":"Understanding the fundamental limitations for the improvement of forward gate bias induced Vth drift stability of GaN based MIS-HEMTs","author":"lagger","year":"2014","journal-title":"International Workshop on Nitride Semiconductors"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2007.911385"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2009.5173224"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1063\/1.4891532"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2087339"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1063\/1.3488610"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1063\/1.2924334"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.50.021001"},{"key":"ref8","author":"nicollian","year":"1982","journal-title":"MOS Physics and Technology"},{"key":"ref7","article-title":"Mapping of interface traps in high-performance A12O3 AIGaN\/GaN MIS-heterostructures using frequency- and temperature- dependent CV techniques","author":"yang","year":"2013","journal-title":"International Electron Device Meeting"},{"key":"ref2","article-title":"Electronic characterization of defects in III-nitride materials and devices","author":"ringel","year":"2013","journal-title":"International Reliability Physics Symposium"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2008.923743"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(88)90408-X"}],"event":{"name":"ESSDERC 2015 - 45th European Solid-State Device Research Conference","location":"Graz, Austria","start":{"date-parts":[[2015,9,14]]},"end":{"date-parts":[[2015,9,18]]}},"container-title":["2015 45th European Solid State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7300344\/7324696\/07324716.pdf?arnumber=7324716","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,24]],"date-time":"2017-03-24T22:44:14Z","timestamp":1490395454000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7324716\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,9]]},"references-count":17,"URL":"https:\/\/doi.org\/10.1109\/essderc.2015.7324716","relation":{},"subject":[],"published":{"date-parts":[[2015,9]]}}}