{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,31]],"date-time":"2026-03-31T14:21:49Z","timestamp":1774966909450,"version":"3.50.1"},"reference-count":6,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,9]]},"DOI":"10.1109\/essderc.2015.7324730","type":"proceedings-article","created":{"date-parts":[[2015,11,12]],"date-time":"2015-11-12T23:03:10Z","timestamp":1447369390000},"page":"130-133","source":"Crossref","is-referenced-by-count":7,"title":["Fabrication of high performance AlGaN\/GaN FinFET by utilizing anisotropic wet etching in TMAH solution"],"prefix":"10.1109","author":[{"given":"Dong-Hyeok","family":"Son","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Young-woo","family":"Jo","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ryun-Hwi","family":"Kim","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chan","family":"Heo","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jae Hwa","family":"Seo","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jin Su","family":"Kim","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"In Man","family":"Kang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Sorin","family":"Cristoloveanu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jung-Hee","family":"Lee","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2266663"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.908601"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2179971"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2179003"},{"key":"ref2","doi-asserted-by":"crossref","first-page":"435","DOI":"10.1109\/LED.2005.851122","article-title":"High-Performance Enhancement-Mode AlGaN\/GaN HEMTs using Fluoride-based Plasma Treatment","volume":"26","author":"cai","year":"2005","journal-title":"IEEE Electron Device Lett"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2009.2039026"}],"event":{"name":"ESSDERC 2015 - 45th European Solid-State Device Research Conference","location":"Graz, Austria","start":{"date-parts":[[2015,9,14]]},"end":{"date-parts":[[2015,9,18]]}},"container-title":["2015 45th European Solid State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7300344\/7324696\/07324730.pdf?arnumber=7324730","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,23]],"date-time":"2017-06-23T23:32:51Z","timestamp":1498260771000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7324730\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,9]]},"references-count":6,"URL":"https:\/\/doi.org\/10.1109\/essderc.2015.7324730","relation":{},"subject":[],"published":{"date-parts":[[2015,9]]}}}