{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,4]],"date-time":"2024-09-04T02:49:51Z","timestamp":1725418191947},"reference-count":14,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,9]]},"DOI":"10.1109\/essderc.2015.7324731","type":"proceedings-article","created":{"date-parts":[[2015,11,12]],"date-time":"2015-11-12T18:03:10Z","timestamp":1447351390000},"page":"134-137","source":"Crossref","is-referenced-by-count":0,"title":["EDMOS in ultrathin FDSOI: Effect of doping and layout of the drift region"],"prefix":"10.1109","author":[{"given":"Antoine","family":"Litty","sequence":"first","affiliation":[]},{"given":"Sylvie","family":"Ortolland","sequence":"additional","affiliation":[]},{"given":"Dominique","family":"Golanski","sequence":"additional","affiliation":[]},{"given":"Christian","family":"Dutto","sequence":"additional","affiliation":[]},{"given":"Sorin","family":"Cristoloveanu","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"journal-title":"Synopsys Sentaurus version J-2014 09","year":"2014","key":"ref10"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.1991.146059"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2003.1269183"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2004.06.007"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2007.4294969"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2013.2295977"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2012.6242497"},{"key":"ref6","article-title":"First demonstration of a full 28nm high-klmetal gate circuit transfer from Bulk to UTBB FDSOI technology through hybrid integration","author":"golanski","year":"2013","journal-title":"VLSI Technology (VLSIT) 2013 Symposium on"},{"key":"ref5","article-title":"Electrical characterization of silicon-on-insulator materials and devices","author":"cristoloveanu","year":"0","journal-title":"Kluwer Academic 1995"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2015.02.013"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDERC.2014.6948776"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/SOI.2007.4357850"},{"key":"ref1","first-page":"1","article-title":"Smart power technologies on SOI","author":"wessels","year":"0","journal-title":"Proceedings of 2011 International Symposium on VLSI Design Automation and Test 2011"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2008.4796634"}],"event":{"name":"ESSDERC 2015 - 45th European Solid-State Device Research Conference","start":{"date-parts":[[2015,9,14]]},"location":"Graz, Austria","end":{"date-parts":[[2015,9,18]]}},"container-title":["2015 45th European Solid State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7300344\/7324696\/07324731.pdf?arnumber=7324731","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,24]],"date-time":"2017-03-24T22:34:30Z","timestamp":1490394870000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7324731\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,9]]},"references-count":14,"URL":"https:\/\/doi.org\/10.1109\/essderc.2015.7324731","relation":{},"subject":[],"published":{"date-parts":[[2015,9]]}}}