{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,19]],"date-time":"2025-12-19T14:42:29Z","timestamp":1766155349388,"version":"3.28.0"},"reference-count":54,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,9]]},"DOI":"10.1109\/essderc.2015.7324754","type":"proceedings-article","created":{"date-parts":[[2015,11,12]],"date-time":"2015-11-12T23:03:10Z","timestamp":1447369390000},"page":"218-225","source":"Crossref","is-referenced-by-count":20,"title":["The defect-centric perspective of device and circuit reliability — From individual defects to circuits"],"prefix":"10.1109","author":[{"given":"B.","family":"Kaczer","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"J.","family":"Franco","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"P.","family":"Weckx","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ph. J.","family":"Roussel","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"E.","family":"Bury","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"M.","family":"Cho","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"R.","family":"Degraeve","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"D.","family":"Linten","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"G.","family":"Groeseneken","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"H.","family":"Kukner","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"P.","family":"Raghavan","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"F.","family":"Catthoor","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"G.","family":"Rzepa","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"W.","family":"Goes","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"T.","family":"Grasser","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2014.2304532"},{"key":"ref38","first-page":"2d.4.1","article-title":"Challenges in the characterization and modeling of BTl induced variability in metal gate\/High-k CMOS technologies","author":"kerber","year":"2013","journal-title":"Proc Int Reliab Phys Symp (IRPS)"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2015.7112702"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2380474"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2014.6860596"},{"key":"ref30","first-page":"152","article-title":"From mean values to distributions of BTl lifetime of deeply scaled FETs through atomistic understanding of the degradation","author":"toledano-luque","year":"2011","journal-title":"Symp VLSI Technol"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2336698"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4614-7909-3_7"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2285245"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2008.4558900"},{"key":"ref28","first-page":"2d.3.1","article-title":"Reduction of the BTl Time-Dependent Variability in Nanoscaled MOSFETs by Body Bias","author":"franco","year":"2013","journal-title":"Proc Int Reliab Phys Symp (IRPS)"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2024031"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2012.6241841"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2044014"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.1995.499353"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/SISPAD.2014.6931568"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2012.6241935"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2015.7112739"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/IPFA.2014.6898196"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/IPFA.2013.6599125"},{"key":"ref26","first-page":"190t","article-title":"Degradation of time dependent variability due to interface state generation","author":"toledano-luque","year":"2013","journal-title":"Symp VLSI Technol"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2014.01.024"},{"key":"ref50","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2361954"},{"key":"ref51","first-page":"5d.2.1","article-title":"Non-Monte-Carlo methodology for high-sigma simulations of circuits under workload-dependent BTl degradation-application to 6T SRAM","author":"weckx","year":"2014","journal-title":"Proc Int Reliab Phys Symp (IRPS)"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2357675"},{"key":"ref53","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2009.5424240"},{"key":"ref52","doi-asserted-by":"publisher","DOI":"10.1109\/SMACD.2012.6339386"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2003.1197716"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2014.2298096"},{"key":"ref40","article-title":"Computer Reliability: Establishing Goals and Use Conditions for IC Reliability Engineering","author":"kwasnick","year":"2014","journal-title":"IEEE Int Reliab Phys Symp (IRPS) Tutorial M4 3"},{"key":"ref12","first-page":"15.4.1","article-title":"BTl variability fundamental understandings and impact on digital logic by the use of extensive dataset","author":"angot","year":"2013","journal-title":"Int Electron Devices Meeting (IEDM) Tech Dig"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2015.2404293"},{"key":"ref14","doi-asserted-by":"crossref","first-page":"500","DOI":"10.1109\/16.987122","article-title":"impact of mosfet gate oxide breakdown on digital circuit operation and reliability","volume":"49","author":"kaczer","year":"2002","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2014.2361342"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2010.5488859"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2013.6531957"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2164543"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2010.5488858"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2011.5784604"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2010.5488856"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2014.7047093"},{"key":"ref5","first-page":"3b.5.1","article-title":"Origins and Implications of Increased Channel Hot Carrier Variability in nFinFETs","author":"kaczer","year":"2015","journal-title":"Proc IEEE Int Reliab Phys Symp (IRPS)"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2121913"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2008.4796712"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2296358"},{"key":"ref9","first-page":"33.3.1","article-title":"Analysis of transistor characteristics in distribution tails beyond ±5.4a of 11 billion transistors","author":"mizutani","year":"2013","journal-title":"Int Electron Devices Meeting (IEDM) Tech Dig"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1109\/DSD.2014.82"},{"key":"ref45","first-page":"1","article-title":"Bias Temperature Instability analysis of FinFET based SRAM cells","author":"khan","year":"2014","journal-title":"Proc Design Automation and Test in Europe (DATE) Conf"},{"key":"ref48","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2015.7112783"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1109\/ISQED.2014.6783362"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1145\/2627369.2627618"},{"key":"ref41","doi-asserted-by":"crossref","first-page":"173","DOI":"10.1109\/TVLSI.2008.2008810","article-title":"The Impact of NBTI Effect on Combinational Circuit: Modeling, Simulation, and Analysis","volume":"18","author":"wang","year":"2010","journal-title":"IEEE T VLSI Systems"},{"key":"ref44","doi-asserted-by":"crossref","first-page":"704","DOI":"10.1109\/TDMR.2014.2314356","article-title":"Atomistic Pseudo-Transient BTl Simulation With Inherent Workload Memory","volume":"14","author":"rodopoulos","year":"2014","journal-title":"IEEE Trans Dev Mater Reliab"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1109\/IIRW.2014.7049501"}],"event":{"name":"ESSDERC 2015 - 45th European Solid-State Device Research Conference","start":{"date-parts":[[2015,9,14]]},"location":"Graz, Austria","end":{"date-parts":[[2015,9,18]]}},"container-title":["2015 45th European Solid State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7300344\/7324696\/07324754.pdf?arnumber=7324754","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,23]],"date-time":"2017-06-23T23:32:51Z","timestamp":1498260771000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7324754\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,9]]},"references-count":54,"URL":"https:\/\/doi.org\/10.1109\/essderc.2015.7324754","relation":{},"subject":[],"published":{"date-parts":[[2015,9]]}}}