{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,1]],"date-time":"2026-04-01T17:23:22Z","timestamp":1775064202486,"version":"3.50.1"},"reference-count":10,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,9]]},"DOI":"10.1109\/essderc.2015.7324765","type":"proceedings-article","created":{"date-parts":[[2015,11,12]],"date-time":"2015-11-12T23:03:10Z","timestamp":1447369390000},"page":"266-269","source":"Crossref","is-referenced-by-count":9,"title":["Benefit of Al<inf>2<\/inf>O<inf>3<\/inf>\/HfO<inf>2<\/inf> bilayer for BEOL RRAM integration through 16kb memory cut characterization"],"prefix":"10.1109","author":[{"given":"M.","family":"Azzaz","sequence":"first","affiliation":[]},{"given":"A.","family":"Benoist","sequence":"additional","affiliation":[]},{"given":"E.","family":"Vianello","sequence":"additional","affiliation":[]},{"given":"D.","family":"Garbin","sequence":"additional","affiliation":[]},{"given":"E.","family":"Jalaguier","sequence":"additional","affiliation":[]},{"given":"C.","family":"Cagli","sequence":"additional","affiliation":[]},{"given":"C.","family":"Charpin","sequence":"additional","affiliation":[]},{"given":"S.","family":"Bernasconi","sequence":"additional","affiliation":[]},{"given":"S.","family":"Jeannot","sequence":"additional","affiliation":[]},{"given":"T.","family":"Dewolf","sequence":"additional","affiliation":[]},{"given":"G.","family":"Audoit","sequence":"additional","affiliation":[]},{"given":"C.","family":"Guedj","sequence":"additional","affiliation":[]},{"given":"S.","family":"Denorme","sequence":"additional","affiliation":[]},{"given":"P.","family":"Candelier","sequence":"additional","affiliation":[]},{"given":"C.","family":"Fenouillet-Beranger","sequence":"additional","affiliation":[]},{"given":"L.","family":"Perniola","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2014.6860604"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2014.7046995"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2184545"},{"key":"ref6","first-page":"162t","article-title":"Understanding of the intrinsic characteristics and memory trade-offs of sub-μA filamentary RRAM operation","author":"goux","year":"2013","journal-title":"2013 Symposium on VLSI Technology VLSIT"},{"key":"ref5","doi-asserted-by":"crossref","first-page":"21.5.1","DOI":"10.1109\/IEDM.2014.7047097","article-title":"Microscopic understanding of the low resistance state retention in HfO2 ad HfAlO based RRAM","author":"traore","year":"2014","journal-title":"Electron Devices Meeting (IEDM) 2014 IEEE International"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2012.6242510"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/VTSA.2011.5872251"},{"key":"ref2","first-page":"52","article-title":"Bi-layered RRAM with unlimited endurance and extremely uniform switching","volume":"53","author":"kim","year":"2011","journal-title":"VLSI Technology (VLSIT) 2011 Symposium on"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/ULIS.2015.7063789"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2011.6131652"}],"event":{"name":"ESSDERC 2015 - 45th European Solid-State Device Research Conference","location":"Graz, Austria","start":{"date-parts":[[2015,9,14]]},"end":{"date-parts":[[2015,9,18]]}},"container-title":["2015 45th European Solid State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7300344\/7324696\/07324765.pdf?arnumber=7324765","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,23]],"date-time":"2017-06-23T23:32:51Z","timestamp":1498260771000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7324765\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,9]]},"references-count":10,"URL":"https:\/\/doi.org\/10.1109\/essderc.2015.7324765","relation":{},"subject":[],"published":{"date-parts":[[2015,9]]}}}