{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,3,24]],"date-time":"2025-03-24T07:49:12Z","timestamp":1742802552724,"version":"3.28.0"},"reference-count":37,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2016,9]]},"DOI":"10.1109\/essderc.2016.7599619","type":"proceedings-article","created":{"date-parts":[[2016,10,20]],"date-time":"2016-10-20T17:00:55Z","timestamp":1476982855000},"page":"192-197","source":"Crossref","is-referenced-by-count":10,"title":["SiC power devices: From conception to social impact"],"prefix":"10.1109","author":[{"given":"B. Jayant","family":"Baliga","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4419-5917-1"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/55.644080"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1002\/9781118313534"},{"article-title":"Silicon Carbide Semiconductor Devices using Buried Silicon Carbdie Conduction Barrier Layers Therein","year":"1996","author":"baliga","key":"ref30"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2014.2352863"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2222415"},{"article-title":"The IGBT Device: Physics, Design, and Applications of the Insulated Gate Bipolar Transistor","year":"2015","author":"baliga","key":"ref35"},{"article-title":"Advanced High Voltage Power Device Concepts","year":"2011","author":"baliga","key":"ref34"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2014.7046960"},{"key":"ref11","article-title":"Wide Bandgap Semiconductor Technology for Energy Efficeincy","author":"agarwal","year":"2015","journal-title":"IEEE Workshop on Wide Bandgap Power Devices and Applications"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/55.192814"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/55.320979"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/55.790716"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2004.841473"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/EDL.1984.25884"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.264-268.1057"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.264-268.1061"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1142\/5986"},{"article-title":"Method of fabricating Silicon Carbide Field Effect Transistor","year":"1994","author":"baliga","key":"ref28"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1016\/S0038-1101(98)00248-2"},{"key":"ref27","first-page":"418","article-title":"Power Semiconductor Devices","author":"baliga","year":"1996"},{"key":"ref3","doi-asserted-by":"crossref","first-page":"1130","DOI":"10.1109\/T-ED.1985.22085","article-title":"gallium arsenide schottky power rectifiers","volume":"32","author":"baliga","year":"1985","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1063\/1.119478"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/55.556091"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1007\/978-0-387-47314-7"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/16.293319"},{"article-title":"Gallium Nitride and Silicon Carbide Power Devices","year":"2016","author":"baliga","key":"ref7"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1063\/1.331646"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/5.301680"},{"key":"ref1","article-title":"Semiconductors for High Voltage Vertical Channel Field Effect Transistors","author":"baliga","year":"1979","journal-title":"GE Class 2 Report # 79CRD186"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2002.804715"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/EDL.1987.26676"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2008.926655"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2016.7520773"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1007\/978-0-387-75589-2"},{"key":"ref26","first-page":"1","article-title":"Prospects for Development of SiC Power Devices","volume":"142","author":"baliga","year":"1996","journal-title":"Silicon carbdie and Realted Materials ?1995 Istitute of Physics Conference Series"},{"article-title":"Silicon Carbide Switching Devices with Rectifying Gate","year":"1995","author":"baliga","key":"ref25"}],"event":{"name":"ESSDERC 2016 - 46th European Solid-State Device Research Conference","start":{"date-parts":[[2016,9,12]]},"location":"Lausanne, Switzerland","end":{"date-parts":[[2016,9,15]]}},"container-title":["2016 46th European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7584557\/7598672\/07599619.pdf?arnumber=7599619","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,24]],"date-time":"2017-06-24T21:43:56Z","timestamp":1498340636000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7599619\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,9]]},"references-count":37,"URL":"https:\/\/doi.org\/10.1109\/essderc.2016.7599619","relation":{},"subject":[],"published":{"date-parts":[[2016,9]]}}}