{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,22]],"date-time":"2024-10-22T16:30:30Z","timestamp":1729614630814,"version":"3.28.0"},"reference-count":49,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2016,9]]},"DOI":"10.1109\/essderc.2016.7599628","type":"proceedings-article","created":{"date-parts":[[2016,10,20]],"date-time":"2016-10-20T17:00:55Z","timestamp":1476982855000},"page":"230-235","source":"Crossref","is-referenced-by-count":5,"title":["2D electronics - opportunities and limitations"],"prefix":"10.1109","author":[{"given":"Z.","family":"Geng","sequence":"first","affiliation":[]},{"given":"W.","family":"Kinberger","sequence":"additional","affiliation":[]},{"given":"R.","family":"Granzner","sequence":"additional","affiliation":[]},{"given":"J.","family":"Pezoldt","sequence":"additional","affiliation":[]},{"given":"F.","family":"Schwierz","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2015.7409812"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2013.6724658"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1039\/C4CS00102H"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/ISQED.2016.7479214"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2263806"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2200688"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2008.2002945"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1147\/rd.504.0377"},{"key":"ref35","doi-asserted-by":"crossref","DOI":"10.1201\/9781315272900","author":"schwierz","year":"2010","journal-title":"Nanometer CMOS"},{"key":"ref34","doi-asserted-by":"crossref","first-page":"963","DOI":"10.1109\/LED.2014.2333368","article-title":"Performance limits projection of black phosphorous field-effect transistors","volume":"35","author":"lam","year":"2014","journal-title":"IEEE Electron Device Lett"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2012.6242489"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2012.6242495"},{"journal-title":"International Roadmap for Semicon ITRS","year":"2013","key":"ref29"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1021\/jp040650f"},{"key":"ref1","doi-asserted-by":"crossref","first-page":"666","DOI":"10.1126\/science.1102896","article-title":"Electric field effect in atomically thin carbon films","volume":"306","author":"novoselov","year":"2004","journal-title":"Science"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1063\/1.4821344"},{"key":"ref22","article-title":"Ultimately scaled MOSFETs: State of the art in the 2000s. A compilation of top references","author":"schwierz","year":"2016","journal-title":"TU Ilmenau"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.3390\/electronics5010003"},{"key":"ref24","first-page":"808","article-title":"Hybrid Si\/TMD 2D electronic double channels usingsolid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs","author":"chen","year":"2014","journal-title":"Tech Dig IEDM"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms6143"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2015.7223653"},{"key":"ref25","first-page":"28t","article-title":"15-nm channel length MoS2 FETs with single- and double-gate structures","author":"nourbaksh","year":"2015","journal-title":"VLSI Tech Dig"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1149\/06910.0231ecst"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/IWJT.2016.7486661"},{"key":"ref40","doi-asserted-by":"crossref","DOI":"10.1143\/JJAP.50.01BC01","article-title":"High current-gain cutoff frequencies above 10MHz in n-channel C60 and p-channel pentacene thin-film transistors","volume":"50","author":"kitamura","year":"2011","journal-title":"Jpn J Appl Phys"},{"key":"ref12","first-page":"313","article-title":"Multigate transistors-Pushing Moore's law to the limits","author":"colinge","year":"2014","journal-title":"Proc SISPAD"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/16.141237"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/16.249482"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1038\/nature10676"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2045100"},{"journal-title":"Modern Microwave Transistors","year":"2003","author":"schwierz","key":"ref17"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1016\/j.physb.2012.08.034"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.93.195428"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1557\/mrs.2014.138"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2013.2257633"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1039\/C5NR01052G"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2010.279"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2012.2190168"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2014.207"},{"key":"ref49","first-page":"1","article-title":"High power fast flexible electronics: Transparent RF AIGaN\/GaN HEMTs on plastic substrates","author":"chang","year":"2015","journal-title":"Dig MTT-S"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms6678"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1021\/nl301699k"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2015.7409707"},{"key":"ref48","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2014.6848275"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1109\/ICIPRM.2012.6403366"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2014.2363789"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1021\/nn403487y"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1038\/srep01291"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2535484"}],"event":{"name":"ESSDERC 2016 - 46th European Solid-State Device Research Conference","start":{"date-parts":[[2016,9,12]]},"location":"Lausanne, Switzerland","end":{"date-parts":[[2016,9,15]]}},"container-title":["2016 46th European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7584557\/7598672\/07599628.pdf?arnumber=7599628","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,9,14]],"date-time":"2019-09-14T17:33:40Z","timestamp":1568482420000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7599628\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,9]]},"references-count":49,"URL":"https:\/\/doi.org\/10.1109\/essderc.2016.7599628","relation":{},"subject":[],"published":{"date-parts":[[2016,9]]}}}