{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,21]],"date-time":"2025-09-21T17:09:57Z","timestamp":1758474597542},"reference-count":13,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2016,9]]},"DOI":"10.1109\/essderc.2016.7599647","type":"proceedings-article","created":{"date-parts":[[2016,10,20]],"date-time":"2016-10-20T21:00:55Z","timestamp":1476997255000},"page":"307-310","source":"Crossref","is-referenced-by-count":10,"title":["Impact of device geometry of the fin Electron-Hole Bilayer Tunnel FET"],"prefix":"10.1109","author":[{"given":"Cem","family":"Alper","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jose L.","family":"Padilla","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Pierpaolo","family":"Palestri","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Adrian M.","family":"Ionescu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1002\/pssb.2221540240"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.23.L35"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1063\/1.4922427"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/ULIS.2011.5757974"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1088\/0268-1242\/31\/4\/045001"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2015.05.030"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2014.2342765"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1063\/1.4894088"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1063\/1.332655"},{"key":"ref7","first-page":"20","article-title":"Assessment of confinement-induced band-to-band tunneling leakage in the Fin EHBT-FET","author":"padilla","year":"0"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDERC.2011.6044185"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2008.18"},{"journal-title":"Handbook Series on Semiconductor Parameters","year":"1999","author":"goldberg","key":"ref9"}],"event":{"name":"ESSDERC 2016 - 46th European Solid-State Device Research Conference","start":{"date-parts":[[2016,9,12]]},"location":"Lausanne, Switzerland","end":{"date-parts":[[2016,9,15]]}},"container-title":["2016 46th European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7584557\/7598672\/07599647.pdf?arnumber=7599647","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2016,11,2]],"date-time":"2016-11-02T07:04:50Z","timestamp":1478070290000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7599647\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,9]]},"references-count":13,"URL":"https:\/\/doi.org\/10.1109\/essderc.2016.7599647","relation":{},"subject":[],"published":{"date-parts":[[2016,9]]}}}