{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,5]],"date-time":"2024-09-05T15:44:42Z","timestamp":1725551082133},"reference-count":14,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2017,9]]},"DOI":"10.1109\/essderc.2017.8066579","type":"proceedings-article","created":{"date-parts":[[2017,10,25]],"date-time":"2017-10-25T20:13:21Z","timestamp":1508962401000},"page":"10-13","source":"Crossref","is-referenced-by-count":1,"title":["Study of error repeatability and recovery in 40nm TaOx ReRAM"],"prefix":"10.1109","author":[{"given":"Takashi","family":"Inose","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Seiichi","family":"Aritome","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ryutaro","family":"Yasuhara","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Satoshi","family":"Mishima","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ken","family":"Takeuchi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/ICICDT.2014.6838600"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2017.7936321"},{"key":"ref12","first-page":"1","article-title":"Formation and Annihilation of Cu Conductive Filament in the Nonpolar Resistively Switching Cu\/ZroO2:CU\/Pt ReRAM","author":"liu","year":"2010","journal-title":"ISCAS"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2161088"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/IMW.2017.7939101"},{"key":"ref4","article-title":"Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application","author":"hayakawa","year":"2015","journal-title":"VLSI Tech Dig"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2013.6487708"},{"key":"ref6","first-page":"729","article-title":"Demonstration of High-density ReRAM Ensuring 10-year Retention at 85oC Based on a Newly Developed Reliability Model","author":"wei","year":"2011","journal-title":"IEDM"},{"key":"ref5","first-page":"1","author":"nardi","year":"2010","journal-title":"Sub-10 ?A reset in NiO-based resistive switching memory (RRAM) cells&#x201D; IMW"},{"key":"ref8","first-page":"256","article-title":"14.3 15fJ\/b static physically unclonable functions for secure chip identification with <2% native bit instability and 140x Inter\/Intra PUF hamming distance separation in 65nm","author":"alvarez","year":"2015","journal-title":"ISSCC Tech Dig"},{"key":"ref7","first-page":"1","article-title":"Effect of SET temperature on data retention performances of HfO2-based RRAM cells","author":"cabout","year":"2014","journal-title":"IMW"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/ISMOT.2012.6679427"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/IITC.2014.6831832"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2016.7573433"}],"event":{"name":"ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC)","start":{"date-parts":[[2017,9,11]]},"location":"Leuven, Belgium","end":{"date-parts":[[2017,9,14]]}},"container-title":["2017 47th European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8059714\/8066575\/08066579.pdf?arnumber=8066579","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,11,30]],"date-time":"2017-11-30T19:56:32Z","timestamp":1512071792000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/8066579\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,9]]},"references-count":14,"URL":"https:\/\/doi.org\/10.1109\/essderc.2017.8066579","relation":{},"subject":[],"published":{"date-parts":[[2017,9]]}}}