{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,29]],"date-time":"2024-10-29T16:51:37Z","timestamp":1730220697189,"version":"3.28.0"},"reference-count":14,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2017,9]]},"DOI":"10.1109\/essderc.2017.8066631","type":"proceedings-article","created":{"date-parts":[[2017,10,25]],"date-time":"2017-10-25T20:13:21Z","timestamp":1508962401000},"page":"220-223","source":"Crossref","is-referenced-by-count":1,"title":["Epitaxial growth and diffusion characteristics analysis of vertical thin poly-Si channel transfer gate structured pixels for 3D CMOS image sensor"],"prefix":"10.1109","author":[{"given":"Sung-Kun","family":"Park","sequence":"first","affiliation":[]},{"given":"Donghyun","family":"Woo","sequence":"additional","affiliation":[]},{"given":"Min-Ki","family":"Na","sequence":"additional","affiliation":[]},{"given":"Pyong-Su","family":"Kwag","sequence":"additional","affiliation":[]},{"given":"Ho-Ryeong","family":"Lee","sequence":"additional","affiliation":[]},{"given":"Kyoung-Wook","family":"Ro","sequence":"additional","affiliation":[]},{"given":"Kyung-Hwan","family":"Kim","sequence":"additional","affiliation":[]},{"given":"Dong-Kyu","family":"Lee","sequence":"additional","affiliation":[]},{"given":"Chris","family":"Hong","sequence":"additional","affiliation":[]},{"given":"In-Wook","family":"Cho","sequence":"additional","affiliation":[]},{"given":"Kyung-Dong","family":"Yoo","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2641579"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1016\/0167-5087(83)90803-7"},{"key":"ref12","first-page":"1","volume":"3","author":"olson","year":"1988","journal-title":"Kinetics of solid phase crystallization in amorphous silicon"},{"journal-title":"Si epitaxy by CVD in Handbook of thin-film deposition processes and techniques","year":"2002","author":"hammond","key":"ref13"},{"key":"ref14","first-page":"33","article-title":"Diffusion in Silicon","author":"jones","year":"2008","journal-title":"IC Knowledge IRWS"},{"journal-title":"Image sensors and methods of fabricating the same","year":"2015","author":"ahn","key":"ref4"},{"journal-title":"Structure and method for 3D image sensor","year":"2015","author":"kao","key":"ref3"},{"key":"ref6","first-page":"124","article-title":"A 1\/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12 ?m pixel with front-side deep-trench isolation and vertical transfer gate","author":"ahn","year":"2014","journal-title":"Proc IEEE ISSCC"},{"journal-title":"Image sensor including vertical transfer gate and method for fabricating the same","year":"2016","author":"yoo","key":"ref5"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2007.4418970"},{"key":"ref7","first-page":"27.4.1","article-title":"Three-dimensional structures for high saturation signals and crosstalk suppression in 1.20?m pixel back-illuminated CMOS image sensor","author":"shinohara","year":"2013","journal-title":"Proc IEEE IEDM"},{"journal-title":"Vertically stacked image sensor","year":"2014","author":"fang","key":"ref2"},{"journal-title":"Image sensor manufacturing apparatus and method and imaging apparatus","year":"2015","author":"kitano","key":"ref1"},{"key":"ref9","first-page":"1","article-title":"A world's first product of three-dimensional vertical NAND Flash memory and beyond","author":"park","year":"2014","journal-title":"Proc IEEE NVMTS"}],"event":{"name":"ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC)","start":{"date-parts":[[2017,9,11]]},"location":"Leuven, Belgium","end":{"date-parts":[[2017,9,14]]}},"container-title":["2017 47th European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8059714\/8066575\/08066631.pdf?arnumber=8066631","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,10,28]],"date-time":"2017-10-28T03:29:23Z","timestamp":1509161363000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/8066631\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,9]]},"references-count":14,"URL":"https:\/\/doi.org\/10.1109\/essderc.2017.8066631","relation":{},"subject":[],"published":{"date-parts":[[2017,9]]}}}