{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,29]],"date-time":"2026-04-29T14:47:57Z","timestamp":1777474077397,"version":"3.51.4"},"reference-count":22,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2017,9]]},"DOI":"10.1109\/essderc.2017.8066648","type":"proceedings-article","created":{"date-parts":[[2017,10,25]],"date-time":"2017-10-25T20:13:21Z","timestamp":1508962401000},"page":"288-291","source":"Crossref","is-referenced-by-count":11,"title":["Impact of impurities, interface traps and contacts on MoS<inf>2<\/inf> MOSFETs: Modelling and experiments"],"prefix":"10.1109","author":[{"given":"Gioele","family":"Mirabelli","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Farzan","family":"Gity","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Scott","family":"Monaghan","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Paul K.","family":"Hurley","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ray","family":"Duffy","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","article-title":"Air sensitivity of MoS2, MoSe 2, MoTe 2, HfS2, and HfSe2","volume":"120","author":"mirabelli","year":"2016","journal-title":"J Appl Phys"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevX.4.011043"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2016.2570280"},{"key":"ref13","year":"2015","journal-title":"International Technology Roadmap for Semiconductors (ITRS"},{"key":"ref14","year":"2015","journal-title":"Sentaurus Device User Guide"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1038\/srep21786"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms7088"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(92)90325-7"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.6b07159"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2365028"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/ULIS.2017.7962592"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.5b03309"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1021\/nn4047474"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.88.165316"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2016.08.068"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1021\/nn500044q"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1063\/1.2407388"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1039\/C5NR01052G"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1038\/nmat4452"},{"key":"ref20","article-title":"Thickness-dependent charge transport in few-layer MoS2 field-effect transistors","volume":"27","author":"lin","year":"2016","journal-title":"Nanotechnology"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1063\/1.4943080"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1039\/C4NR06331G"}],"event":{"name":"ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC)","location":"Leuven, Belgium","start":{"date-parts":[[2017,9,11]]},"end":{"date-parts":[[2017,9,14]]}},"container-title":["2017 47th European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8059714\/8066575\/08066648.pdf?arnumber=8066648","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,11,30]],"date-time":"2017-11-30T20:54:10Z","timestamp":1512075250000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/8066648\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,9]]},"references-count":22,"URL":"https:\/\/doi.org\/10.1109\/essderc.2017.8066648","relation":{},"subject":[],"published":{"date-parts":[[2017,9]]}}}