{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,29]],"date-time":"2024-10-29T16:51:41Z","timestamp":1730220701098,"version":"3.28.0"},"reference-count":18,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,9]]},"DOI":"10.1109\/essderc.2018.8486851","type":"proceedings-article","created":{"date-parts":[[2018,10,18]],"date-time":"2018-10-18T14:50:05Z","timestamp":1539874205000},"page":"166-169","source":"Crossref","is-referenced-by-count":8,"title":["Static and Low Frequency Noise Characterization of InGaAs MOSFETs and FinFETs on Insulator"],"prefix":"10.1109","author":[{"given":"T. A.","family":"Karatsori","sequence":"first","affiliation":[]},{"given":"K.","family":"Bennamane","sequence":"additional","affiliation":[]},{"given":"C. G.","family":"Theodorou","sequence":"additional","affiliation":[]},{"given":"L.","family":"Czornomaz","sequence":"additional","affiliation":[]},{"given":"J.","family":"Fompeyrine","sequence":"additional","affiliation":[]},{"given":"C.","family":"Zota","sequence":"additional","affiliation":[]},{"given":"C.","family":"Convertino","sequence":"additional","affiliation":[]},{"given":"G.","family":"Ghibaudo","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2015.06.002"},{"key":"ref11","first-page":"307","article-title":"Mobility characterization in advanced FD-SOI CMOS devices","author":"ghibaudo","year":"2010","journal-title":"“Semiconductor-On-Insulator Materials for NanoElectonics Applications”"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2015.02.012"},{"key":"ref13","first-page":"429","article-title":"Self-Aligned InGaAs FinFETs with 5-nm Fin-Width and 5-nm Gate-Contact Separation","author":"vardi","year":"2017","journal-title":"Proc IEEE IEDM"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1049\/el.2009.0044"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2011.03.091"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.2211240225"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/55.46938"},{"key":"ref18","doi-asserted-by":"crossref","first-page":"1116","DOI":"10.1088\/0268-1242\/4\/12\/013","article-title":"Individual defects at the Si: SiO2 interface","volume":"4","author":"kirton","year":"1989","journal-title":"Semicond Sci Technol"},{"key":"ref4","first-page":"31. 3. 1","article-title":"Quantum-size effects in sub 10-nm fin width InGaAs FinFETs","author":"vardi","year":"2015","journal-title":"Proc IEEE IEDM"},{"key":"ref3","first-page":"-9t","article-title":"First Demonstration of InGaAs\/SiGe CMOS Inverters and Dense SRAM Arrays on Si Using Selective Epitaxy and Standard FEOL Processes","author":"czornomaz","year":"2016","journal-title":"VLSI Tech Symp"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2013.02.011"},{"key":"ref5","first-page":"425","article-title":"A Scaled Replacement Metal Gate InGaAs-on-Insulator n-FinFET on Si with Record Performance","author":"hahn","year":"2017","journal-title":"Proc IEEE IEDM"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1049\/el:19880369"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2016.04.011"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.23919\/VLSIT.2017.7998193"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838336"},{"journal-title":"Electrical characterization of interface properties in nano-scaled MOSFET devices based on low-frequency fluctuations","year":"2015","author":"koyama","key":"ref9"}],"event":{"name":"48th European Solid-State Device Research Conference (ESSDERC 2018)","start":{"date-parts":[[2018,9,3]]},"location":"Dresden","end":{"date-parts":[[2018,9,6]]}},"container-title":["2018 48th European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8476153\/8486846\/08486851.pdf?arnumber=8486851","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,26]],"date-time":"2022-01-26T15:40:43Z","timestamp":1643211643000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8486851\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,9]]},"references-count":18,"URL":"https:\/\/doi.org\/10.1109\/essderc.2018.8486851","relation":{},"subject":[],"published":{"date-parts":[[2018,9]]}}}