{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,25]],"date-time":"2025-10-25T12:58:25Z","timestamp":1761397105078,"version":"3.28.0"},"reference-count":33,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,9]]},"DOI":"10.1109\/essderc.2018.8486876","type":"proceedings-article","created":{"date-parts":[[2018,10,18]],"date-time":"2018-10-18T18:50:05Z","timestamp":1539888605000},"page":"6-11","source":"Crossref","is-referenced-by-count":0,"title":["MOS Device Technology using Alternative Channel Materials for Low Power Logic LSI"],"prefix":"10.1109","author":[{"given":"Shinichi","family":"Takagi","sequence":"first","affiliation":[]},{"given":"Kimihiko Kato Wu-Kang","family":"Kim","sequence":"additional","affiliation":[]},{"given":"Kwangwon","family":"Jo","sequence":"additional","affiliation":[]},{"given":"Ryo","family":"Matsumura","sequence":"additional","affiliation":[]},{"given":"Ryotaro","family":"Takaguchi","sequence":"additional","affiliation":[]},{"given":"Dae-Hwan","family":"Ahn","sequence":"additional","affiliation":[]},{"given":"Takahiro","family":"Gotow","sequence":"additional","affiliation":[]},{"given":"Mitsuru","family":"Takenaka","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref33","first-page":"377","article-title":"Proposal and demonstration of Oxide-semiconductor\/ (Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment","author":"kato","year":"2017","journal-title":"IEEE Tech Dig Int Electron Device Meeting"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2312939"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2211600"},{"key":"ref30","first-page":"500","article-title":"Vertical InAs\/GaAsSb\/GaSb Tunneling Field-Effect Transistor on Si with S = 48 mV\/decade and Ion = 10 ?A\/?m for Ioff = 1 nA\/?m at VDS = 0. 3 V","author":"memisevic","year":"2016","journal-title":"IEEE Tech Dig Int Electron Device Meeting"},{"key":"ref10","first-page":"217","article-title":"Effect of SiGe Layer Thickness in Starting Substrate on Electrical Properties of Ultrathin Body Ge-on-insulator pMOSFET fabricated by Ge Condensation","author":"jo","year":"2017","journal-title":"Int Conf Solid State Devices and Materials"},{"key":"ref11","first-page":"163","article-title":"Impact of SOI, Si1-xGexOI and GeOI substrates on CMOS compatible Tunnel FET performance","author":"mayer","year":"2008","journal-title":"IEEE Tech Dig Int Electron Device Meeting"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.57.04FD15"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.57.04FD05"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.57.04FD10"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1063\/1.4927265"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2013.10.067"},{"key":"ref17","first-page":"331","article-title":"High Ion\/Ioff Ge-source ultrathin body strained-SOI Tunnel FETs-impact of channel strain, MOS interfaces and back gate on the electrical properties","author":"kim","year":"2014","journal-title":"IEEE Int Electron Device Meeting"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.57.04FD11"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1063\/1.4891493"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1063\/1.4992005"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2014.6894395"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.7567\/APEX.10.084201"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2016.07.002"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2015.7223687"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1063\/1.4993823"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2010.2070470"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1063\/1.1622442"},{"key":"ref7","first-page":"516","author":"takagi","year":"2016","journal-title":"IEEE Int Electron Device Meeting"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.54.06FA01"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.23919\/VLSIT.2017.7998216"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2013.04.020"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1149\/05303.0107ecst"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2270558"},{"key":"ref21","doi-asserted-by":"crossref","first-page":"621","DOI":"10.1109\/TNANO.2013.2265435","article-title":"Experimental Study on Electron Mobility in InxGac1-xAs-on-insulator Metal-Oxide-Semiconductor Field-Effect Transistors with In content modulation and MOS interface buffer engineering","volume":"12","author":"kim","year":"2013","journal-title":"IEEE Trans on Nanotechnology"},{"key":"ref24","first-page":"1954","article-title":"High Performance Tri-gate Extremely-thin-Body lnAs-on-lnsulator MOSFETs with high short channel effect immunity and Vth tenability","volume":"61","author":"kim","year":"2014","journal-title":"IEEE Trans Electron Devices"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2279363"},{"key":"ref26","first-page":"224","article-title":"Performance improvement of InxGa1-xAs Tunnel FETs with Quantum Well and EOT scaling","author":"ahn","year":"2016","journal-title":"Tech Dig VLSI Symp"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1063\/1.3668120"}],"event":{"name":"48th European Solid-State Device Research Conference (ESSDERC 2018)","start":{"date-parts":[[2018,9,3]]},"location":"Dresden","end":{"date-parts":[[2018,9,6]]}},"container-title":["2018 48th European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8476153\/8486846\/08486876.pdf?arnumber=8486876","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,8,24]],"date-time":"2020-08-24T03:19:22Z","timestamp":1598239162000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8486876\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,9]]},"references-count":33,"URL":"https:\/\/doi.org\/10.1109\/essderc.2018.8486876","relation":{},"subject":[],"published":{"date-parts":[[2018,9]]}}}