{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,29]],"date-time":"2024-10-29T16:51:55Z","timestamp":1730220715970,"version":"3.28.0"},"reference-count":11,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,9]]},"DOI":"10.1109\/essderc.2018.8486907","type":"proceedings-article","created":{"date-parts":[[2018,10,18]],"date-time":"2018-10-18T18:50:05Z","timestamp":1539888605000},"page":"38-41","source":"Crossref","is-referenced-by-count":0,"title":["First-principles study of electron transport through phase-engineered Au - Mo Te<inf>2<\/inf>contacts"],"prefix":"10.1109","author":[{"given":"M. E.","family":"Lee","sequence":"first","affiliation":[]},{"given":"U. G.","family":"Vej-Hansen","sequence":"additional","affiliation":[]},{"given":"P. A.","family":"Khomyakov","sequence":"additional","affiliation":[]},{"given":"D.","family":"Stradi","sequence":"additional","affiliation":[]},{"given":"J.","family":"Wellendorff","sequence":"additional","affiliation":[]},{"given":"S.","family":"Smidstrup","sequence":"additional","affiliation":[]},{"given":"K.","family":"Stokbro","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"journal-title":"Atomistix ToolKit version 2017 12 Synopsys-QuantumATK","year":"0","key":"ref4"},{"key":"ref3","doi-asserted-by":"crossref","DOI":"10.1126\/science.aab3175","article-title":"Phase patterning for ohmic homojunction contact in MoTe2","volume":"349","author":"cho","year":"2015","journal-title":"Science"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1016\/j.cpc.2015.05.011"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.65.165401"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1002\/0470068329"},{"key":"ref5","doi-asserted-by":"crossref","DOI":"10.1088\/0953-8984\/14\/11\/302","article-title":"The SIESTA method for ab initio order-N materials simulation","volume":"14","author":"soler","year":"2002","journal-title":"J Phys Condens Matter"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.77.3865"},{"key":"ref7","article-title":"General atomistic approach for modeling metal-semiconductor interfaces using density functional theory and nonequilibrium Green's function","volume":"93","author":"stradi","year":"2015","journal-title":"Phys Rev B"},{"key":"ref2","doi-asserted-by":"crossref","DOI":"10.1126\/science.aab2750","article-title":"Nanomaterials in transistors: From high-performance to thin-film applications","volume":"349","author":"franklin","year":"2015","journal-title":"Science"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1002\/jcc.20495"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1016\/j.mattod.2016.10.002"}],"event":{"name":"48th European Solid-State Device Research Conference (ESSDERC 2018)","start":{"date-parts":[[2018,9,3]]},"location":"Dresden","end":{"date-parts":[[2018,9,6]]}},"container-title":["2018 48th European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8476153\/8486846\/08486907.pdf?arnumber=8486907","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,8,24]],"date-time":"2020-08-24T03:20:03Z","timestamp":1598239203000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8486907\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,9]]},"references-count":11,"URL":"https:\/\/doi.org\/10.1109\/essderc.2018.8486907","relation":{},"subject":[],"published":{"date-parts":[[2018,9]]}}}