{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,26]],"date-time":"2025-10-26T21:34:47Z","timestamp":1761514487430,"version":"3.41.2"},"reference-count":22,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,9,1]],"date-time":"2019-09-01T00:00:00Z","timestamp":1567296000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,9,1]],"date-time":"2019-09-01T00:00:00Z","timestamp":1567296000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,9]]},"DOI":"10.1109\/essderc.2019.8901692","type":"proceedings-article","created":{"date-parts":[[2019,11,25]],"date-time":"2019-11-25T14:01:19Z","timestamp":1574690479000},"page":"114-117","source":"Crossref","is-referenced-by-count":3,"title":["49dB depletion-load amplifiers with polysilicon source-gated transistors"],"prefix":"10.1109","author":[{"given":"Eva","family":"Bestelink","sequence":"first","affiliation":[{"name":"University of Surrey,Advanced Technology Institute,United Kingdom"}]},{"given":"S. Ravi P.","family":"Silva","sequence":"additional","affiliation":[{"name":"University of Surrey,Advanced Technology Institute,United Kingdom"}]},{"given":"Radu A.","family":"Sporea","sequence":"additional","affiliation":[{"name":"University of Surrey,Advanced Technology Institute,United Kingdom"}]},{"given":"Luca","family":"Maiolo","sequence":"additional","affiliation":[{"name":"Istituto per la Microelettronica e Microsistemi,Consiglio Nazionale delle Ricerche,Roma,Italia"}]},{"given":"Francesco","family":"Maita","sequence":"additional","affiliation":[{"name":"Istituto per la Microelettronica e Microsistemi,Consiglio Nazionale delle Ricerche,Roma,Italia"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1063\/1.4817502"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2056151"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2264547"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/SMICND.2017.8101185"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/16.644643"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2198823"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1073\/pnas.1820756116"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2011.06.010"},{"journal-title":"Atlas User s Manual Device Simulation Software","year":"2016","key":"ref18"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2056151"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.201600557"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1016\/j.snb.2012.10.093"},{"key":"ref6","first-page":"684","article-title":"Noise margin modeling for zero-VGS load TFT circuits and yield estimation","volume":"63","author":"zhao","year":"2016"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2088127"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/EUROCON.2013.6625261"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2157798"},{"key":"ref2","doi-asserted-by":"crossref","first-page":"1486","DOI":"10.1109\/JPROC.2012.2190168","article-title":"Flexible electronics: The next ubiquitous platform","volume":"100","author":"dyadyusha","year":"2012","journal-title":"Proc IEEE"},{"key":"ref1","first-page":"31","article-title":"Low temperature poly-silicon thin film transistor flexible sensing circuit","author":"keren","year":"2017","journal-title":"ICSE 2016"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2003.813379"},{"journal-title":"Microelectronic Circuits","year":"2004","author":"sedra","key":"ref20"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2009.02.105"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2280912"}],"event":{"name":"ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)","start":{"date-parts":[[2019,9,23]]},"location":"Cracow, Poland","end":{"date-parts":[[2019,9,26]]}},"container-title":["ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8894830\/8901681\/08901692.pdf?arnumber=8901692","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,7,28]],"date-time":"2025-07-28T19:37:30Z","timestamp":1753731450000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8901692\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,9]]},"references-count":22,"URL":"https:\/\/doi.org\/10.1109\/essderc.2019.8901692","relation":{},"subject":[],"published":{"date-parts":[[2019,9]]}}}