{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,11]],"date-time":"2025-09-11T17:53:08Z","timestamp":1757613188264,"version":"3.44.0"},"reference-count":24,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,9,1]],"date-time":"2019-09-01T00:00:00Z","timestamp":1567296000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,9,1]],"date-time":"2019-09-01T00:00:00Z","timestamp":1567296000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,9]]},"DOI":"10.1109\/essderc.2019.8901704","type":"proceedings-article","created":{"date-parts":[[2019,11,25]],"date-time":"2019-11-25T14:01:19Z","timestamp":1574690479000},"page":"162-165","source":"Crossref","is-referenced-by-count":5,"title":["Self-Heating in 28 FDSOI UTBB MOSFETs at Cryogenic Temperatures"],"prefix":"10.1109","author":[{"given":"Lucas","family":"Nyssens","sequence":"first","affiliation":[{"name":"Université catholique de Louvain,ICTEAM,Louvain-la-Neuve,Belgium,1348"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Arka","family":"Halder","sequence":"additional","affiliation":[{"name":"Université catholique de Louvain,ICTEAM,Louvain-la-Neuve,Belgium,1348"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Babak Kazemi","family":"Esfeh","sequence":"additional","affiliation":[{"name":"Université catholique de Louvain,ICTEAM,Louvain-la-Neuve,Belgium,1348"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Nicolas","family":"Planes","sequence":"additional","affiliation":[{"name":"ST, ST-Microelectronics,Crolles,France,38926"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Michel","family":"Haond","sequence":"additional","affiliation":[{"name":"ST, ST-Microelectronics,Crolles,France,38926"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Denis","family":"Flandre","sequence":"additional","affiliation":[{"name":"Université catholique de Louvain,ICTEAM,Louvain-la-Neuve,Belgium,1348"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jean-Pierre","family":"Raskin","sequence":"additional","affiliation":[{"name":"Université catholique de Louvain,ICTEAM,Louvain-la-Neuve,Belgium,1348"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Valeriya","family":"Kilchytska","sequence":"additional","affiliation":[{"name":"Université catholique de Louvain,ICTEAM,Louvain-la-Neuve,Belgium,1348"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","article-title":"28 FDSOI analog and RF Figures of Merit at cryogenic temperatures","author":"esfeh","year":"2019","journal-title":"Solid State Electronics"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.23919\/SNW.2017.8242338"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2019.2906724"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838410"},{"key":"ref14","first-page":"594","article-title":"Cryogenic temperature charactirezation of a 28-nm FDSOI dedicated structure for advanced CMOS and quantum technologies co-integration","author":"galy","year":"0","journal-title":"IEEE JEDS 2018"},{"key":"ref15","doi-asserted-by":"crossref","first-page":"133","DOI":"10.1038\/30156","article-title":"A silicon-based nuclear spin quantum computer","author":"kane","year":"1998","journal-title":"Nature"},{"key":"ref16","doi-asserted-by":"crossref","first-page":"410","DOI":"10.1038\/nature15263","article-title":"A two-quibit logic gate in silicon","volume":"526","author":"veldhorst","year":"2015","journal-title":"Nature"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(94)00130-8"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2005.06.007"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2015.08.022"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.911338"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2008.4796664"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2015.11.020"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2014.12.007"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/RFIC.2015.7337778"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/CSICS.2014.6978546"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDERC.2010.5618389"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2012.6242497"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/ULIS.2018.8354742"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2259174"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/4.701253"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/16.915707"},{"key":"ref24","first-page":"387","article-title":"The N-MOS Transistor as a Low-Temperature Thermometer","volume":"97","author":"de la hidalga-w","year":"1997","journal-title":"ECS Proceedings"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/16.30968"}],"event":{"name":"ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)","start":{"date-parts":[[2019,9,23]]},"location":"Cracow, Poland","end":{"date-parts":[[2019,9,26]]}},"container-title":["ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8894830\/8901681\/08901704.pdf?arnumber=8901704","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,9,4]],"date-time":"2025-09-04T18:20:27Z","timestamp":1757010027000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8901704\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,9]]},"references-count":24,"URL":"https:\/\/doi.org\/10.1109\/essderc.2019.8901704","relation":{},"subject":[],"published":{"date-parts":[[2019,9]]}}}