{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,8,2]],"date-time":"2025-08-02T19:14:03Z","timestamp":1754162043633,"version":"3.41.2"},"reference-count":6,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,9,1]],"date-time":"2019-09-01T00:00:00Z","timestamp":1567296000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,9,1]],"date-time":"2019-09-01T00:00:00Z","timestamp":1567296000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,9]]},"DOI":"10.1109\/essderc.2019.8901726","type":"proceedings-article","created":{"date-parts":[[2019,11,25]],"date-time":"2019-11-25T14:01:19Z","timestamp":1574690479000},"page":"234-237","source":"Crossref","is-referenced-by-count":2,"title":["Generation of oxide traps in Back-Side-Illuminated CMOS Image Sensors and impact on reliability"],"prefix":"10.1109","author":[{"given":"Andrea","family":"Vici","sequence":"first","affiliation":[{"name":"Sapienza University of Rome,DIET,Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Felice","family":"Russo","sequence":"additional","affiliation":[{"name":"LFoundry a SMIC Company,Avezzano,Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Nicola","family":"Lovisi","sequence":"additional","affiliation":[{"name":"LFoundry a SMIC Company,Avezzano,Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Aldo","family":"Marchioni","sequence":"additional","affiliation":[{"name":"LFoundry a SMIC Company,Avezzano,Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Antonio","family":"Casella","sequence":"additional","affiliation":[{"name":"LFoundry a SMIC Company,Avezzano,Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Fernanda","family":"Irrera","sequence":"additional","affiliation":[{"name":"Sapienza University of Rome,DIET,Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","first-page":"2016","article-title":"Random telegraph signals in semiconductor devices","author":"simoen","year":"2016","journal-title":"Random Telegraph Signals in Semiconductor Devices"},{"key":"ref3","first-page":"32","article-title":"Through-silicon-trench in backside-illuminated cmos image sensors for the improvement of gate oxide long term performance","author":"vici","year":"2018","journal-title":"2018 IEEE International Electron Devices Meeting (IEDM)"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1063\/1.361786"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/16.293349"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2018.8353611"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1533\/9780857097521.1.98"}],"event":{"name":"ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)","start":{"date-parts":[[2019,9,23]]},"location":"Cracow, Poland","end":{"date-parts":[[2019,9,26]]}},"container-title":["ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8894830\/8901681\/08901726.pdf?arnumber=8901726","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,7,29]],"date-time":"2025-07-29T18:22:28Z","timestamp":1753813348000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8901726\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,9]]},"references-count":6,"URL":"https:\/\/doi.org\/10.1109\/essderc.2019.8901726","relation":{},"subject":[],"published":{"date-parts":[[2019,9]]}}}