{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,12]],"date-time":"2025-10-12T04:57:31Z","timestamp":1760245051775,"version":"3.44.0"},"reference-count":20,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,9,1]],"date-time":"2019-09-01T00:00:00Z","timestamp":1567296000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,9,1]],"date-time":"2019-09-01T00:00:00Z","timestamp":1567296000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,9]]},"DOI":"10.1109\/essderc.2019.8901775","type":"proceedings-article","created":{"date-parts":[[2019,11,25]],"date-time":"2019-11-25T14:01:19Z","timestamp":1574690479000},"page":"198-201","source":"Crossref","is-referenced-by-count":4,"title":["Compact Modeling of Low Frequency Noise and Thermal Noise in Junction Field Effect Transistors"],"prefix":"10.1109","author":[{"given":"Nikolaos","family":"Makris","sequence":"first","affiliation":[{"name":"Technical University of Crete,School of Electrical & Computer Engineering,Chania,Greece,73100"}]},{"given":"Loukas","family":"Chevas","sequence":"additional","affiliation":[{"name":"Technical University of Crete,School of Electrical & Computer Engineering,Chania,Greece,73100"}]},{"given":"Matthias","family":"Bucher","sequence":"additional","affiliation":[{"name":"Technical University of Crete,School of Electrical & Computer Engineering,Chania,Greece,73100"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(65)90007-9"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(92)90264-D"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/16.333808"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2838101"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2838090"},{"key":"ref15","article-title":"A Compact Model for Static and Dynamic Operation of Symmetric Double-Gate Junction FETs","author":"makris","year":"2018","journal-title":"48th European Solid-State Device Research Conference (ESS-DERC)"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1017\/9781316676899"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TIM.2005.858534"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1002\/0470855460"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2437954"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/RFIC.2010.5477348"},{"key":"ref3","first-page":"310","article-title":"Ultra-low noise, single JFET voltage pre-amplifier for low frequency noise measurements","author":"scandurra","year":"2019","journal-title":"25th Int Conf on Noise and Fluctuations (ICNF)"},{"key":"ref6","first-page":"184","article-title":"A cost-competitive low noise Junction-FET (JFET) for high-precision analog application","author":"qiang","year":"2019","journal-title":"25th Int Conf on Noise and Fluctuations (ICNF)"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2006.01.009"},{"key":"ref8","doi-asserted-by":"crossref","first-page":"428","DOI":"10.1109\/T-ED.1969.16772","article-title":"high-frequency fet noise parameters and approximation of the optimum source admittance","volume":"16","author":"leupp","year":"1969","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/PROC.1963.1849"},{"key":"ref2","doi-asserted-by":"crossref","first-page":"34005","DOI":"10.1088\/1674-4926\/37\/3\/034005","article-title":"Total dose effects on the g–r noise of JFET transistors","volume":"37","author":"wei","year":"2016","journal-title":"J Of Semiconductors"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2018.2844545"},{"key":"ref9","doi-asserted-by":"crossref","first-page":"795","DOI":"10.1109\/PROC.1964.3123","article-title":"theory of low-frequency generation noise in junction-gate field-effect transistors","volume":"52","author":"sah","year":"1964","journal-title":"Proceedings of the IEEE"},{"journal-title":"Data Sheet","article-title":"2SK30A TOSHIBA Field effect transistor silicon N channel junction type","year":"2003","key":"ref20"}],"event":{"name":"ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)","start":{"date-parts":[[2019,9,23]]},"location":"Cracow, Poland","end":{"date-parts":[[2019,9,26]]}},"container-title":["ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8894830\/8901681\/08901775.pdf?arnumber=8901775","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,8,21]],"date-time":"2025-08-21T18:21:41Z","timestamp":1755800501000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8901775\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,9]]},"references-count":20,"URL":"https:\/\/doi.org\/10.1109\/essderc.2019.8901775","relation":{},"subject":[],"published":{"date-parts":[[2019,9]]}}}