{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,21]],"date-time":"2025-02-21T01:14:01Z","timestamp":1740100441733,"version":"3.37.3"},"reference-count":15,"publisher":"IEEE","license":[{"start":{"date-parts":[[2021,9,13]],"date-time":"2021-09-13T00:00:00Z","timestamp":1631491200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2021,9,13]],"date-time":"2021-09-13T00:00:00Z","timestamp":1631491200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/100010661","name":"H2020 EU projects","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100010661","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2021,9,13]]},"DOI":"10.1109\/essderc53440.2021.9631382","type":"proceedings-article","created":{"date-parts":[[2021,12,13]],"date-time":"2021-12-13T21:10:04Z","timestamp":1639429804000},"page":"287-290","source":"Crossref","is-referenced-by-count":1,"title":["Scaling ferroelectric HZO thickness for low power Ge MFS-FTJ memories"],"prefix":"10.1109","author":[{"given":"Nikitas","family":"Siannas","sequence":"first","affiliation":[{"name":"Institute of NanoScience and Nanotechnology, NCSR Demokritos,Athens,Greece"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Christina","family":"Zacharaki","sequence":"additional","affiliation":[{"name":"Institute of NanoScience and Nanotechnology, NCSR Demokritos,Athens,Greece"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Polychronis","family":"Tsipas","sequence":"additional","affiliation":[{"name":"Institute of NanoScience and Nanotechnology, NCSR Demokritos,Athens,Greece"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Stefanos","family":"Chaitoglou","sequence":"additional","affiliation":[{"name":"Institute of NanoScience and Nanotechnology, NCSR Demokritos,Athens,Greece"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Laura","family":"Begon-Lours","sequence":"additional","affiliation":[{"name":"IBM Research,Neuromorphic Devices and Systems,Rüschlikon,Switzerland"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Athanasios","family":"Dimoulas","sequence":"additional","affiliation":[{"name":"Institute of NanoScience and Nanotechnology, NCSR Demokritos,Athens,Greece"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2002.807708"},{"key":"ref11","first-page":"218","article-title":"The Role of Interface Defect States in n - and p - Type Ge Metal - Ferroelectric - Semiconductor Structures with Hf0.5Zr0.5O2","volume":"2000500","author":"boni","year":"2021","journal-title":"Ferroelectric Phys Status Solidi A"},{"journal-title":"One nanometer HfO2- based ferroelectric tunnel junctions on silicon","year":"2020","author":"cheema","key":"ref12"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2885932"},{"key":"ref14","first-page":"250","volume":"178","author":"chouprik","year":"2017","journal-title":"Electron transport across ultrathin ferroelectric Hf0 5Zr0 5O2 films on Si Microelectronic Engineering"},{"key":"ref15","first-page":"36","article-title":"New opportunity of ferroelectric tunnel junction memory with ultrathin HfO2-based oxides","author":"tian","year":"0","journal-title":"Electron Devices Technology and Manufacturing Conference (EDTM)"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1063\/5.0007111"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1063\/1.5090036"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1063\/1.5060676"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1063\/5.0029657"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1063\/1.1659141"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1002\/pssr.202000524"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1038\/s41586-020-2208-x"},{"journal-title":"Ferroelectricity in Doped Hafnium Oxide Materials Properties and Devices","year":"2019","author":"schroeder","key":"ref1"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1063\/1.5128502"}],"event":{"name":"ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC)","start":{"date-parts":[[2021,9,13]]},"location":"Grenoble, France","end":{"date-parts":[[2021,9,22]]}},"container-title":["ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9631379\/9631380\/09631382.pdf?arnumber=9631382","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,8,2]],"date-time":"2022-08-02T23:43:45Z","timestamp":1659483825000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9631382\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,9,13]]},"references-count":15,"URL":"https:\/\/doi.org\/10.1109\/essderc53440.2021.9631382","relation":{},"subject":[],"published":{"date-parts":[[2021,9,13]]}}}